JPS55123148A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55123148A JPS55123148A JP2993879A JP2993879A JPS55123148A JP S55123148 A JPS55123148 A JP S55123148A JP 2993879 A JP2993879 A JP 2993879A JP 2993879 A JP2993879 A JP 2993879A JP S55123148 A JPS55123148 A JP S55123148A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass
- substrate
- layer
- electrodeposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the generation of stress inside a substrate by a method wherein a thickness of an oxide film on the collector side of a semiconductor substrate is set in advance at that of the strength limit at which the film is destroyed with an impressed voltage in a glass electrodeposition and the reverse surface is electrodeposited when the glass electrodeposition is provided onto separating grooves. CONSTITUTION:A p-type base layer 24 is formed inside an n-layer 22 on an n<+>- layer 23, an n-type emitter layer 25 is formed inside the layer 24 and an SiO2 film 26 and a PSG film 27 are formed. An SiO2 film 211 is also coated on the reverse surface of a substrate to have such a film thickness at which the film is destroyed with an impressed voltage about 250V in a glass electrodeposition. When a separating groove 29 is made and the glass electrodeposition is provided, a glass 210 and a glass film 212 of about 17mu are so formed in the groove and on the reverse surface of the substrate respectively as not to produce a warp with correction of the substrate stress. Consequently, the yield in manufacturing processes and the manufacturing characteristics are improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993879A JPS55123148A (en) | 1979-03-16 | 1979-03-16 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993879A JPS55123148A (en) | 1979-03-16 | 1979-03-16 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55123148A true JPS55123148A (en) | 1980-09-22 |
Family
ID=12289925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2993879A Pending JPS55123148A (en) | 1979-03-16 | 1979-03-16 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55123148A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111936U (en) * | 1982-01-27 | 1983-07-30 | 新電元工業株式会社 | semiconductor element |
| CN101626018A (en) * | 2008-07-07 | 2010-01-13 | 精工电子有限公司 | Semiconductor device |
| CN107546264A (en) * | 2016-06-29 | 2018-01-05 | 格罗方德半导体公司 | Heterojunction bipolar transistor with the components of stress |
-
1979
- 1979-03-16 JP JP2993879A patent/JPS55123148A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111936U (en) * | 1982-01-27 | 1983-07-30 | 新電元工業株式会社 | semiconductor element |
| CN101626018A (en) * | 2008-07-07 | 2010-01-13 | 精工电子有限公司 | Semiconductor device |
| US8933541B2 (en) * | 2008-07-07 | 2015-01-13 | Seiko Instruments Inc. | Semiconductor device |
| TWI471922B (en) * | 2008-07-07 | 2015-02-01 | Seiko Instr Inc | Semiconductor device |
| CN107546264A (en) * | 2016-06-29 | 2018-01-05 | 格罗方德半导体公司 | Heterojunction bipolar transistor with the components of stress |
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