JPS5679484A - Semiconductor luminous element - Google Patents

Semiconductor luminous element

Info

Publication number
JPS5679484A
JPS5679484A JP15719979A JP15719979A JPS5679484A JP S5679484 A JPS5679484 A JP S5679484A JP 15719979 A JP15719979 A JP 15719979A JP 15719979 A JP15719979 A JP 15719979A JP S5679484 A JPS5679484 A JP S5679484A
Authority
JP
Japan
Prior art keywords
layer
gaas
thin
constitution
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15719979A
Other languages
Japanese (ja)
Inventor
Jiyunkou Takagi
Koji Tomita
Tadaaki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15719979A priority Critical patent/JPS5679484A/en
Publication of JPS5679484A publication Critical patent/JPS5679484A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To intend to increase the yield by setting the first layer which contacts with a substrate outside the luminous region to form a reverse bias junction and confining the luminous area within a very small region, thereby simplifying the step. CONSTITUTION:A p-GaAs 12 is set to open on an n<+>-GaAs 11 and n-Ga0.7Al0.3 As 13, p-GaAs 14, p-Ga0.7Al0.3As 15 and p-Ga0.9Al0.1As 16 are laminated thereon. As a result, the surface thereof becomes even. Then, a Zn is diffused on the layer 16 to form a thin p-layer 17 and further covered with SiO2 film 18 to attach electrodes 19 and 20 thereto. In this constitution, since the layer 12 is thin and fine holes can be formed with a photoetching method, the increase of the yield is remarkable. Further, since the p<+>-layer 17 is for ohm contact and may be a thin film, it is obtained in a very short time of diffusion. Furthermore, there occurs no deterioration of the crystal of the epitaxial layer and the life can be extended.
JP15719979A 1979-12-03 1979-12-03 Semiconductor luminous element Pending JPS5679484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15719979A JPS5679484A (en) 1979-12-03 1979-12-03 Semiconductor luminous element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15719979A JPS5679484A (en) 1979-12-03 1979-12-03 Semiconductor luminous element

Publications (1)

Publication Number Publication Date
JPS5679484A true JPS5679484A (en) 1981-06-30

Family

ID=15644360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15719979A Pending JPS5679484A (en) 1979-12-03 1979-12-03 Semiconductor luminous element

Country Status (1)

Country Link
JP (1) JPS5679484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121885A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor light emitting element and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121885A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor light emitting element and manufacture thereof

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