JPS54154285A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54154285A
JPS54154285A JP6311978A JP6311978A JPS54154285A JP S54154285 A JPS54154285 A JP S54154285A JP 6311978 A JP6311978 A JP 6311978A JP 6311978 A JP6311978 A JP 6311978A JP S54154285 A JPS54154285 A JP S54154285A
Authority
JP
Japan
Prior art keywords
layer
dielectric strength
pellet
constitution
filled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6311978A
Other languages
Japanese (ja)
Other versions
JPS6232630B2 (en
Inventor
Shigeru Kokuuchi
Hideyuki Yagi
Keiichi Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6311978A priority Critical patent/JPS54154285A/en
Publication of JPS54154285A publication Critical patent/JPS54154285A/en
Publication of JPS6232630B2 publication Critical patent/JPS6232630B2/ja
Granted legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To increase the dielectric strength by providing the penetrated diffusion part around the pellet and then the circular layer between the diffusion part and the P-base layer with the glass filled.
CONSTITUTION: Penetrated diffusion layer 6 is formed by diffusing P selectively from a pair of main surfaces 201 and 202 of pellet 20, and circular groove 7 is provided at the side of anode 14 and between layer 6 and P-emitter layer 4 to be filled up with the glass. At the same time, N-layer 5 is provided at the center of surface 202 to form the reverse conducting diode layer. In such constitution, the dielectric strength of junction J2 between layer 6 and N-base layer 3 can be increased about 40% compared with the conventional bevel structure. Accordingly, the forward voltage drop can be reduced by decreasing the thickness of layer 3 so much that no punch-through is caused. As a result, the effect caused by addition of the life time killer can be offset, increasing the dielectric strength about 40%.
COPYRIGHT: (C)1979,JPO&Japio
JP6311978A 1978-05-26 1978-05-26 Semiconductor device Granted JPS54154285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6311978A JPS54154285A (en) 1978-05-26 1978-05-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6311978A JPS54154285A (en) 1978-05-26 1978-05-26 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54154285A true JPS54154285A (en) 1979-12-05
JPS6232630B2 JPS6232630B2 (en) 1987-07-15

Family

ID=13220072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6311978A Granted JPS54154285A (en) 1978-05-26 1978-05-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54154285A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202779A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device
US4400716A (en) * 1980-01-17 1983-08-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062585A (en) * 1973-10-05 1975-05-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062585A (en) * 1973-10-05 1975-05-28

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400716A (en) * 1980-01-17 1983-08-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrate
JPS57202779A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6232630B2 (en) 1987-07-15

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