JPS5649576A - Schottky diode - Google Patents
Schottky diodeInfo
- Publication number
- JPS5649576A JPS5649576A JP12412679A JP12412679A JPS5649576A JP S5649576 A JPS5649576 A JP S5649576A JP 12412679 A JP12412679 A JP 12412679A JP 12412679 A JP12412679 A JP 12412679A JP S5649576 A JPS5649576 A JP S5649576A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- schottky diode
- circular
- resisting pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To lower the threshold voltage and increase resisting pressure by a method wherein the portion near the surface where a semiconductor is connected with a metal is surrounded with a low density layer of the same conductive type as that of the semiconductor. CONSTITUTION:After an n layer is formed on an n<+> type Si substrate, an n<-> type circular layer 3 is laid on it by injecting B ions. Then an opening is made in an SiO2 film 4 so that Ti 5 may come into contact with the circular layer. A leak in a Schottky diode is prevented in the neighborhood of the interfacing surface by such a construction, while reverse resisting pressure is increased. When using a p<+> type Si substrate, a circular p<-> layer is formed by laying a p layer to produce a W electrode. Then a similar Schottky diode with high resisting pressure and low threshold voltage become obtainable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12412679A JPS5649576A (en) | 1979-09-28 | 1979-09-28 | Schottky diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12412679A JPS5649576A (en) | 1979-09-28 | 1979-09-28 | Schottky diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5649576A true JPS5649576A (en) | 1981-05-06 |
Family
ID=14877563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12412679A Pending JPS5649576A (en) | 1979-09-28 | 1979-09-28 | Schottky diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5649576A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04505406A (en) * | 1990-02-09 | 1992-09-24 | トリサ ビュルステンファブリーク アーゲー トリーゲン | oral hygiene device |
JPH08204210A (en) * | 1995-01-20 | 1996-08-09 | Rohm Co Ltd | Schottky barrier diode |
US8030193B2 (en) | 2006-12-15 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52120774A (en) * | 1976-04-05 | 1977-10-11 | Nec Corp | Semiconductor device |
-
1979
- 1979-09-28 JP JP12412679A patent/JPS5649576A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52120774A (en) * | 1976-04-05 | 1977-10-11 | Nec Corp | Semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04505406A (en) * | 1990-02-09 | 1992-09-24 | トリサ ビュルステンファブリーク アーゲー トリーゲン | oral hygiene device |
JPH08204210A (en) * | 1995-01-20 | 1996-08-09 | Rohm Co Ltd | Schottky barrier diode |
US8030193B2 (en) | 2006-12-15 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
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