JPS5649576A - Schottky diode - Google Patents

Schottky diode

Info

Publication number
JPS5649576A
JPS5649576A JP12412679A JP12412679A JPS5649576A JP S5649576 A JPS5649576 A JP S5649576A JP 12412679 A JP12412679 A JP 12412679A JP 12412679 A JP12412679 A JP 12412679A JP S5649576 A JPS5649576 A JP S5649576A
Authority
JP
Japan
Prior art keywords
layer
type
schottky diode
circular
resisting pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12412679A
Other languages
Japanese (ja)
Inventor
Hideo Tanbara
Akihiro Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12412679A priority Critical patent/JPS5649576A/en
Publication of JPS5649576A publication Critical patent/JPS5649576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To lower the threshold voltage and increase resisting pressure by a method wherein the portion near the surface where a semiconductor is connected with a metal is surrounded with a low density layer of the same conductive type as that of the semiconductor. CONSTITUTION:After an n layer is formed on an n<+> type Si substrate, an n<-> type circular layer 3 is laid on it by injecting B ions. Then an opening is made in an SiO2 film 4 so that Ti 5 may come into contact with the circular layer. A leak in a Schottky diode is prevented in the neighborhood of the interfacing surface by such a construction, while reverse resisting pressure is increased. When using a p<+> type Si substrate, a circular p<-> layer is formed by laying a p layer to produce a W electrode. Then a similar Schottky diode with high resisting pressure and low threshold voltage become obtainable.
JP12412679A 1979-09-28 1979-09-28 Schottky diode Pending JPS5649576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12412679A JPS5649576A (en) 1979-09-28 1979-09-28 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12412679A JPS5649576A (en) 1979-09-28 1979-09-28 Schottky diode

Publications (1)

Publication Number Publication Date
JPS5649576A true JPS5649576A (en) 1981-05-06

Family

ID=14877563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12412679A Pending JPS5649576A (en) 1979-09-28 1979-09-28 Schottky diode

Country Status (1)

Country Link
JP (1) JPS5649576A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04505406A (en) * 1990-02-09 1992-09-24 トリサ　ビュルステンファブリーク　アーゲー　トリーゲン oral hygiene device
JPH08204210A (en) * 1995-01-20 1996-08-09 Rohm Co Ltd Schottky barrier diode
US8030193B2 (en) 2006-12-15 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120774A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52120774A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04505406A (en) * 1990-02-09 1992-09-24 トリサ　ビュルステンファブリーク　アーゲー　トリーゲン oral hygiene device
JPH08204210A (en) * 1995-01-20 1996-08-09 Rohm Co Ltd Schottky barrier diode
US8030193B2 (en) 2006-12-15 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device

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