JPS5683036A - Glass passivation of mesa type semiconductor device - Google Patents
Glass passivation of mesa type semiconductor deviceInfo
- Publication number
- JPS5683036A JPS5683036A JP16035879A JP16035879A JPS5683036A JP S5683036 A JPS5683036 A JP S5683036A JP 16035879 A JP16035879 A JP 16035879A JP 16035879 A JP16035879 A JP 16035879A JP S5683036 A JPS5683036 A JP S5683036A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- groove
- semiconductor device
- type semiconductor
- volume
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent the generation of crack in the passivation glass and to prevent the deterioration of electric characteristic of a mesa type semiconductor device by a method wherein a groove being provided in the semiconductor substrate is buried with glass of accumulation quantity having a specified relation with the volume of the groove and is burned. CONSTITUTION:When the groove 6 is to be provided in the semiconductor substrate and is to be passivated with glass, the accumulation quantity of glass V1 is made to be less than V2/k (V2 indicates the volume of the groove 6, k indicates the changing ratio of volume by burning) and is accumulated and is burned to form the glass passivation film 7. By this way, the surface of the glass is made to be concave, crack withstanding intensity is improved, the deterioration of electric characteristic is prevented and the yield of manufacture can be elevated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16035879A JPS5683036A (en) | 1979-12-12 | 1979-12-12 | Glass passivation of mesa type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16035879A JPS5683036A (en) | 1979-12-12 | 1979-12-12 | Glass passivation of mesa type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5683036A true JPS5683036A (en) | 1981-07-07 |
Family
ID=15713240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16035879A Pending JPS5683036A (en) | 1979-12-12 | 1979-12-12 | Glass passivation of mesa type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5683036A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5741738A (en) * | 1994-12-02 | 1998-04-21 | International Business Machines Corporation | Method of making corner protected shallow trench field effect transistor |
US5868870A (en) * | 1992-12-10 | 1999-02-09 | Micron Technology, Inc. | Isolation structure of a shallow semiconductor device trench |
-
1979
- 1979-12-12 JP JP16035879A patent/JPS5683036A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5868870A (en) * | 1992-12-10 | 1999-02-09 | Micron Technology, Inc. | Isolation structure of a shallow semiconductor device trench |
US5741738A (en) * | 1994-12-02 | 1998-04-21 | International Business Machines Corporation | Method of making corner protected shallow trench field effect transistor |
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