JPS5452471A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5452471A
JPS5452471A JP11924177A JP11924177A JPS5452471A JP S5452471 A JPS5452471 A JP S5452471A JP 11924177 A JP11924177 A JP 11924177A JP 11924177 A JP11924177 A JP 11924177A JP S5452471 A JPS5452471 A JP S5452471A
Authority
JP
Japan
Prior art keywords
gold
mask
groove
mesa
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11924177A
Other languages
Japanese (ja)
Inventor
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11924177A priority Critical patent/JPS5452471A/en
Publication of JPS5452471A publication Critical patent/JPS5452471A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To mass-produce SCRs without the need of the vapor deposition of Al, etc., by covering the mouth of a formed mesa groove with a mask plate and then by adhering heavy metal.
CONSTITUTION: At the time of forming the PN-PN structure, mesa grooves 7 are formed on both the sides of substrate 1 by using SiO2 film 8 as a mask. Film 8 is removed, the mesa groove on the main surface at one side is covered with mask plate of Mo, etc., and gold 3 is vapor-deposited. Next, mask 10 is removed, gold is diffused, and remaining gold is removed. Then, glass powder is supplied into groove 7 and baked to form protective film 11. Further, electrodes 4 to 6 are provided and separated to make SCR pellets. In this constitution, since no gold is vapor-deposited on the mesa groove where the (pn) junction is exposed, the trap level by gold in the depletion layer is small and a leak current will not increase. In addition, the formation and removement of an Al mask are not required, so that excellent mass-production can be attained
COPYRIGHT: (C)1979,JPO&Japio
JP11924177A 1977-10-03 1977-10-03 Manufacture of semiconductor device Pending JPS5452471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11924177A JPS5452471A (en) 1977-10-03 1977-10-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11924177A JPS5452471A (en) 1977-10-03 1977-10-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5452471A true JPS5452471A (en) 1979-04-25

Family

ID=14756450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11924177A Pending JPS5452471A (en) 1977-10-03 1977-10-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5452471A (en)

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