JPS57149772A - Gate turn off thyristor - Google Patents
Gate turn off thyristorInfo
- Publication number
- JPS57149772A JPS57149772A JP3582681A JP3582681A JPS57149772A JP S57149772 A JPS57149772 A JP S57149772A JP 3582681 A JP3582681 A JP 3582681A JP 3582681 A JP3582681 A JP 3582681A JP S57149772 A JPS57149772 A JP S57149772A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- gate
- cathode
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve turn off performance and to permit high-frequency operation as well by a method wherein cathode N layer are formed by split and surface gate layers and buried gate layers are formed on a gate P layer by dispersion. CONSTITUTION:Cathode N2 layers are formed with broad rectangular shape and buried gate layers 4 formed low-resistance layers P2<++> are arranged in a P2 layer corresponding to the central sections of the N2 layers by diffusion. And surface gate layers 5 consisting of high-impurity layers are arranged on the surface of the P2 layer lain between each N2 layer by diffusion. Oxide films 6 are arranged on the surfaces of the layes 5 by riding on the N2 layers by diffusion and the short-circuits between the N2 layers and the layers 5 are prevented when a cathode electrode 7 is covered on the whole surfaces of the N2 layers. And a load current flowing to the N2 layers is turned off by the gate action at both the layers 4 and layers 5. In this composition, the width of effective cathode layers becomes narrow even if the width of the layers 4 is made narrower than the width of the N2 layers. Furthermore, the influence of autodope can be eliminated even if each interval Wg of the layers 4 is broaden. As a result, turn on time and turn off time can be shortened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3582681A JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3582681A JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57149772A true JPS57149772A (en) | 1982-09-16 |
| JPH0136259B2 JPH0136259B2 (en) | 1989-07-31 |
Family
ID=12452753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3582681A Granted JPS57149772A (en) | 1981-03-12 | 1981-03-12 | Gate turn off thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57149772A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60166161U (en) * | 1984-04-11 | 1985-11-05 | 株式会社明電舎 | GTO thyristor |
-
1981
- 1981-03-12 JP JP3582681A patent/JPS57149772A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60166161U (en) * | 1984-04-11 | 1985-11-05 | 株式会社明電舎 | GTO thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136259B2 (en) | 1989-07-31 |
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