JPS57136367A - Rectifier controlled with semiconductor - Google Patents

Rectifier controlled with semiconductor

Info

Publication number
JPS57136367A
JPS57136367A JP2203581A JP2203581A JPS57136367A JP S57136367 A JPS57136367 A JP S57136367A JP 2203581 A JP2203581 A JP 2203581A JP 2203581 A JP2203581 A JP 2203581A JP S57136367 A JPS57136367 A JP S57136367A
Authority
JP
Japan
Prior art keywords
type
layers
semiconductor
layer
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2203581A
Other languages
Japanese (ja)
Inventor
Yasuo Kataoka
Mitsuru Hanakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP2203581A priority Critical patent/JPS57136367A/en
Publication of JPS57136367A publication Critical patent/JPS57136367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enhance current capacity of a rectifier controlled with semiconductor by a method wherein gates are formed with layers of high impurities concentration, and are arranged to be piled up between the buried part and the surface of a semiconductor layer. CONSTITUTION:P<+> type players 11 having high concentration of impurities are formed in the surface layer 4 of a laminated layers body consisting of a P type layer 2, an N type layer 3 and the P type layer 4, then P type layers 16 and N type layers 5 are formed alternately in the surface part, electrodes 6 on the N type layers 5 are made as the cathode electrodes, and the P type layers 16 and the buried layers 11 are made as the gate electrode parts. Accordingly the resistance value of gate of the controlled semiconductor rectifier is reduced, a gate current at the turn-off time is facilitated to flow, and the current capacity is enhanced.
JP2203581A 1981-02-17 1981-02-17 Rectifier controlled with semiconductor Pending JPS57136367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2203581A JPS57136367A (en) 1981-02-17 1981-02-17 Rectifier controlled with semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2203581A JPS57136367A (en) 1981-02-17 1981-02-17 Rectifier controlled with semiconductor

Publications (1)

Publication Number Publication Date
JPS57136367A true JPS57136367A (en) 1982-08-23

Family

ID=12071698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2203581A Pending JPS57136367A (en) 1981-02-17 1981-02-17 Rectifier controlled with semiconductor

Country Status (1)

Country Link
JP (1) JPS57136367A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026272A (en) * 1973-07-06 1975-03-19
JPS5317274A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Electrode structure of semiconductor element
JPS5418133U (en) * 1977-07-08 1979-02-06
JPS5444876A (en) * 1977-09-16 1979-04-09 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS5468162A (en) * 1977-11-11 1979-06-01 Hitachi Ltd Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026272A (en) * 1973-07-06 1975-03-19
JPS5317274A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Electrode structure of semiconductor element
JPS5418133U (en) * 1977-07-08 1979-02-06
JPS5444876A (en) * 1977-09-16 1979-04-09 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS5468162A (en) * 1977-11-11 1979-06-01 Hitachi Ltd Semiconductor device

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