JPS5624979A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5624979A
JPS5624979A JP10145479A JP10145479A JPS5624979A JP S5624979 A JPS5624979 A JP S5624979A JP 10145479 A JP10145479 A JP 10145479A JP 10145479 A JP10145479 A JP 10145479A JP S5624979 A JPS5624979 A JP S5624979A
Authority
JP
Japan
Prior art keywords
density
gate
withstand voltage
contact
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10145479A
Other languages
Japanese (ja)
Other versions
JPS6228593B2 (en
Inventor
Hideaki Kozu
Akira Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10145479A priority Critical patent/JPS5624979A/en
Publication of JPS5624979A publication Critical patent/JPS5624979A/en
Publication of JPS6228593B2 publication Critical patent/JPS6228593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce the source series resistance of a field effect transistor without lowering the gate withstand voltage thereof by lowering the impurity density on the surface relative to the gate withstand voltage, forming the position of impurity high density which lowers the contact resistance at deep position of the GaAs active layer and making it contact with the alloy layer of an ohmic electrode at said position. CONSTITUTION:The density of an active layer 4 on a semi-insulating GaAs substrate 5 is distributed in crest manner of 10<17>cm<-3> on the surface through 2X 10<18>cm<-3> at the maximum, and 10<18>cm<-3> on the substrate surface. The depth of the alloy layer 6 of source and drain electrodes 2 and 3 at both sides of the gate electrode 1 is determined by the thickness of the ohmic metal, the temperature and the time when forming the alloy to each the position 7 of the maximum density. This configuration can sufficiently guarantee the withstand voltage of the gate 1 and realize the low resistance contact so as to perform low noise operation.
JP10145479A 1979-08-08 1979-08-08 Field effect transistor Granted JPS5624979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10145479A JPS5624979A (en) 1979-08-08 1979-08-08 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10145479A JPS5624979A (en) 1979-08-08 1979-08-08 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS5624979A true JPS5624979A (en) 1981-03-10
JPS6228593B2 JPS6228593B2 (en) 1987-06-22

Family

ID=14301132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10145479A Granted JPS5624979A (en) 1979-08-08 1979-08-08 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5624979A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944057U (en) * 1982-07-26 1984-03-23 スペリ・コ−ポレ−シヨン GaAs depletion mode device
JPS6085567A (en) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp Field-effect transistor
JPS60247976A (en) * 1984-05-23 1985-12-07 Nec Corp Semiconductor device
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268379A (en) * 1975-12-04 1977-06-07 Fujitsu Ltd Semiconductor device
JPS5348488A (en) * 1976-10-14 1978-05-01 Mitsubishi Electric Corp Field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268379A (en) * 1975-12-04 1977-06-07 Fujitsu Ltd Semiconductor device
JPS5348488A (en) * 1976-10-14 1978-05-01 Mitsubishi Electric Corp Field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944057U (en) * 1982-07-26 1984-03-23 スペリ・コ−ポレ−シヨン GaAs depletion mode device
JPS6085567A (en) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp Field-effect transistor
JPS60247976A (en) * 1984-05-23 1985-12-07 Nec Corp Semiconductor device
JPH0812867B2 (en) * 1984-05-23 1996-02-07 日本電気株式会社 Semiconductor device
JPS6476774A (en) * 1987-09-18 1989-03-22 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6228593B2 (en) 1987-06-22

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