JPS5783057A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5783057A
JPS5783057A JP14015181A JP14015181A JPS5783057A JP S5783057 A JPS5783057 A JP S5783057A JP 14015181 A JP14015181 A JP 14015181A JP 14015181 A JP14015181 A JP 14015181A JP S5783057 A JPS5783057 A JP S5783057A
Authority
JP
Japan
Prior art keywords
region
type
base
thyristor
linear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14015181A
Other languages
Japanese (ja)
Other versions
JPS5917547B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP56140151A priority Critical patent/JPS5917547B2/en
Publication of JPS5783057A publication Critical patent/JPS5783057A/en
Publication of JPS5917547B2 publication Critical patent/JPS5917547B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To shorten a switching time and to reduce the base resistance of the high-powered element for the subject thyristor by a method wherein, in the thyristor of four-layer structure, the second base region of linear or reticular structure is provided in the reverse conductive type region contacting the base layer. CONSTITUTION:The first P type base region 21 (or 22) is tabularly provided between a P type anodic region 4 and an N type cathodic region 51 through the intermediary of N type regions 52 and 53. In the N type region 52 or 53 adjoining the base region 21 (or 22), the P type region 22 (or 21), which is relatively high-densed, is formed in linear or reticular form, and using the above as the second base region, it is operated in parallel with the region 21 by an electrode 2. Through these procedures, the transverse resistance of the base layer can be reduced and, at the same time, the lowering of implantation efficiency can also be prevented, thereby enabling to perform a high-speed operation of the element having a large area (a high power). Also, since a current concentration can be preveted, di/dt and dV/dt withstand strength can be increased.
JP56140151A 1981-09-05 1981-09-05 thyristor Expired JPS5917547B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56140151A JPS5917547B2 (en) 1981-09-05 1981-09-05 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56140151A JPS5917547B2 (en) 1981-09-05 1981-09-05 thyristor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5600273A Division JPS579226B2 (en) 1973-05-18 1973-05-18

Publications (2)

Publication Number Publication Date
JPS5783057A true JPS5783057A (en) 1982-05-24
JPS5917547B2 JPS5917547B2 (en) 1984-04-21

Family

ID=15262050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56140151A Expired JPS5917547B2 (en) 1981-09-05 1981-09-05 thyristor

Country Status (1)

Country Link
JP (1) JPS5917547B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141179A (en) * 1984-12-13 1986-06-28 Mitsuteru Kimura Turn-off thyristor
EP0341000A2 (en) * 1988-05-02 1989-11-08 General Electric Company Gated turn-off semiconductor device
EP0344514A2 (en) * 1988-05-31 1989-12-06 Siemens Aktiengesellschaft GTO thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0909120B1 (en) * 1997-10-11 2005-06-08 Conti Temic microelectronic GmbH Housing for electronic components

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141179A (en) * 1984-12-13 1986-06-28 Mitsuteru Kimura Turn-off thyristor
JPH0580832B2 (en) * 1984-12-13 1993-11-10 Mitsuteru Kimura
EP0341000A2 (en) * 1988-05-02 1989-11-08 General Electric Company Gated turn-off semiconductor device
EP0344514A2 (en) * 1988-05-31 1989-12-06 Siemens Aktiengesellschaft GTO thyristor

Also Published As

Publication number Publication date
JPS5917547B2 (en) 1984-04-21

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