GB2011712A - Thyristor capable of being switched off without blocking recovery delay time, and method of operating such thyristor - Google Patents

Thyristor capable of being switched off without blocking recovery delay time, and method of operating such thyristor

Info

Publication number
GB2011712A
GB2011712A GB7849372A GB7849372A GB2011712A GB 2011712 A GB2011712 A GB 2011712A GB 7849372 A GB7849372 A GB 7849372A GB 7849372 A GB7849372 A GB 7849372A GB 2011712 A GB2011712 A GB 2011712A
Authority
GB
United Kingdom
Prior art keywords
thyristor
delay time
cathode
blocking
recovery delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7849372A
Other versions
GB2011712B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, BBC Brown Boveri France SA filed Critical BBC Brown Boveri AG Switzerland
Publication of GB2011712A publication Critical patent/GB2011712A/en
Application granted granted Critical
Publication of GB2011712B publication Critical patent/GB2011712B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)

Abstract

A thyristor which switches off without blocking recovery delay time, blocking being effected while positive anode current is still flowing, with the maximum occurring commutating-off speed, comprises shorting 2 across the cathode emitter zone 1, the number and/or the shaping of the emitter short- circuits and/or the doping of the cathode-side base zone being chosen to provide the required shorting. In order to produce the high turn-on currents which are made necessary by these measures (the holding currents are between about 1 and 20A), thyristor structures are preferably used in which the turning-on can be effected by beaming light into an area located between the cathode metallizations 4 (Figure 4). <IMAGE>
GB7849372A 1977-12-22 1978-12-20 Thyristor capable of being switched off without blocking recovery delay time and method of operating such thyristor Expired GB2011712B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1583277A CH629338A5 (en) 1977-12-22 1977-12-22 THYRISTOR WITHOUT LOCKING DELAY.

Publications (2)

Publication Number Publication Date
GB2011712A true GB2011712A (en) 1979-07-11
GB2011712B GB2011712B (en) 1982-06-16

Family

ID=4412334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7849372A Expired GB2011712B (en) 1977-12-22 1978-12-20 Thyristor capable of being switched off without blocking recovery delay time and method of operating such thyristor

Country Status (4)

Country Link
JP (1) JPS5488089A (en)
CH (1) CH629338A5 (en)
DE (1) DE2804014A1 (en)
GB (1) GB2011712B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2535901A1 (en) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc HIGH REVERSE VOLTAGE ASYMMETRICAL THYRISTOR
WO1992011659A1 (en) * 1990-12-22 1992-07-09 Robert Bosch Gmbh High-voltage circuit component

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940576A (en) * 1982-08-30 1984-03-06 Junichi Nishizawa Photo thyristor
DE3424222A1 (en) * 1984-06-30 1986-01-09 Brown, Boveri & Cie Ag, 6800 Mannheim SWITCHABLE THYRISTOR

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2535901A1 (en) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc HIGH REVERSE VOLTAGE ASYMMETRICAL THYRISTOR
EP0109331A1 (en) * 1982-11-10 1984-05-23 Le Silicium Semiconducteur Ssc Asymmetrical thyristor for high inverse biasing
WO1992011659A1 (en) * 1990-12-22 1992-07-09 Robert Bosch Gmbh High-voltage circuit component
US5497010A (en) * 1990-12-22 1996-03-05 Robert Bosch Gmbh High-voltage semiconductor device

Also Published As

Publication number Publication date
GB2011712B (en) 1982-06-16
JPS5488089A (en) 1979-07-12
CH629338A5 (en) 1982-04-15
DE2804014A1 (en) 1979-07-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee