JPS5367379A - Switching thristor of field effect type - Google Patents

Switching thristor of field effect type

Info

Publication number
JPS5367379A
JPS5367379A JP14274976A JP14274976A JPS5367379A JP S5367379 A JPS5367379 A JP S5367379A JP 14274976 A JP14274976 A JP 14274976A JP 14274976 A JP14274976 A JP 14274976A JP S5367379 A JPS5367379 A JP S5367379A
Authority
JP
Japan
Prior art keywords
field effect
switching
thristor
effect type
shorten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14274976A
Other languages
Japanese (ja)
Other versions
JPS5942988B2 (en
Inventor
Yaichiro Watakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14274976A priority Critical patent/JPS5942988B2/en
Publication of JPS5367379A publication Critical patent/JPS5367379A/en
Publication of JPS5942988B2 publication Critical patent/JPS5942988B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:The prescribed region of the anode layer of a field effect-type switching thyristor is expanded to the cathode side to shorten the gap between the both, and without its forward voltage drop is made large, the current amplification factor is made small, thereby improving switching-off characteristics.
JP14274976A 1976-11-27 1976-11-27 Field effect switching thyristor Expired JPS5942988B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14274976A JPS5942988B2 (en) 1976-11-27 1976-11-27 Field effect switching thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14274976A JPS5942988B2 (en) 1976-11-27 1976-11-27 Field effect switching thyristor

Publications (2)

Publication Number Publication Date
JPS5367379A true JPS5367379A (en) 1978-06-15
JPS5942988B2 JPS5942988B2 (en) 1984-10-18

Family

ID=15322678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14274976A Expired JPS5942988B2 (en) 1976-11-27 1976-11-27 Field effect switching thyristor

Country Status (1)

Country Link
JP (1) JPS5942988B2 (en)

Also Published As

Publication number Publication date
JPS5942988B2 (en) 1984-10-18

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