JPS5444876A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5444876A
JPS5444876A JP11182877A JP11182877A JPS5444876A JP S5444876 A JPS5444876 A JP S5444876A JP 11182877 A JP11182877 A JP 11182877A JP 11182877 A JP11182877 A JP 11182877A JP S5444876 A JPS5444876 A JP S5444876A
Authority
JP
Japan
Prior art keywords
region
type
shape
layer
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11182877A
Other languages
Japanese (ja)
Inventor
Yoshisuke Takita
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP11182877A priority Critical patent/JPS5444876A/en
Publication of JPS5444876A publication Critical patent/JPS5444876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To make large the current capacity of a thyristor, and to improve gate reverse dielectric strength, by forming a buried region, which is of the same conduction type decreasing the horizontal resistance of a base layer and extremely high in impurity density, inside the base layer of the gate turn-off thyristor of four layers and three junctions according to a concentric pattern, etc. CONSTITUTION:On P type semiconductor substrate 1, N type layer 2 and P type layer 3 are formed and N type region 13 is also formed inside layer 3 to constitute the four layers and three junctions; and then, electrode 7 is fitted to the reverse surface of substrate 1, and electrode 15 to region 13, thereby obtaining the gate turn-off thyristor. In this constitution, low-resistance P<++> type region 11 is distributively formed in the middle part of P type layer 3 according to the fixed pattern, and gate electrode 12 is provided there. This region 11 is for the purpose of decreasing the horizontal resistance of base region, and its pattern is made into a concentrical shape, involute shape, lattice shape, radial shape, or parallel shape, thereby attaining uniform distribution.
JP11182877A 1977-09-16 1977-09-16 Semiconductor device Pending JPS5444876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11182877A JPS5444876A (en) 1977-09-16 1977-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11182877A JPS5444876A (en) 1977-09-16 1977-09-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5444876A true JPS5444876A (en) 1979-04-09

Family

ID=14571177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11182877A Pending JPS5444876A (en) 1977-09-16 1977-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5444876A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101775A (en) * 1980-01-19 1981-08-14 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS57136367A (en) * 1981-02-17 1982-08-23 Meidensha Electric Mfg Co Ltd Rectifier controlled with semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122673A (en) * 1973-03-23 1974-11-22
JPS5012787A (en) * 1973-03-23 1975-02-10

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122673A (en) * 1973-03-23 1974-11-22
JPS5012787A (en) * 1973-03-23 1975-02-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101775A (en) * 1980-01-19 1981-08-14 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS6362906B2 (en) * 1980-01-19 1988-12-05
JPS57136367A (en) * 1981-02-17 1982-08-23 Meidensha Electric Mfg Co Ltd Rectifier controlled with semiconductor

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