JPS5734360A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5734360A
JPS5734360A JP11001680A JP11001680A JPS5734360A JP S5734360 A JPS5734360 A JP S5734360A JP 11001680 A JP11001680 A JP 11001680A JP 11001680 A JP11001680 A JP 11001680A JP S5734360 A JPS5734360 A JP S5734360A
Authority
JP
Japan
Prior art keywords
region
regions
collector
base
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11001680A
Other languages
Japanese (ja)
Other versions
JPS6348190B2 (en
Inventor
Kenichi Muramoto
Takeo Shiomi
Masahiro Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11001680A priority Critical patent/JPS5734360A/en
Publication of JPS5734360A publication Critical patent/JPS5734360A/en
Publication of JPS6348190B2 publication Critical patent/JPS6348190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Abstract

PURPOSE:To obtain a power transistor device with a protective diode formed in one body by a method wherein reverse conductive region is provided at a section on the collector region of a junction transistor and a high density region is formed in between the reverse conductive region and a base region. CONSTITUTION:A P-region 5 is provided within the area whereon a collector depletion layer will be formed on the front side of the collector region 2 of a device 10, a high density region 6 is formed between the P region and a base 3 and a structure, wherein the regions 2 and 5 are short-circuited with an electrode 9, is obtained. The density ratio of the regions 2 and 6 is established in such manner that the withstand voltage between the regions 3 and 5, which will be determined in proportion to the distance between the regions 3 and 5, will be made smaller than that between the regions 3 and 6, and the regions 2 and 3 respectively. Through these procedures, a circuit wherein a Zener diode is connected in paralled between the base and collector, can be installed in the device 10, thereby enabling to cut down the cost, miniaturize and increase the reliability of the semiconductor device.
JP11001680A 1980-08-11 1980-08-11 Semiconductor device Granted JPS5734360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11001680A JPS5734360A (en) 1980-08-11 1980-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11001680A JPS5734360A (en) 1980-08-11 1980-08-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734360A true JPS5734360A (en) 1982-02-24
JPS6348190B2 JPS6348190B2 (en) 1988-09-28

Family

ID=14524978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11001680A Granted JPS5734360A (en) 1980-08-11 1980-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5734360A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727408A (en) * 1984-06-11 1988-02-23 Nec Corporation Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor
JPH02303035A (en) * 1989-05-17 1990-12-17 Toshiba Corp Semiconductor device
JPH04170072A (en) * 1990-11-02 1992-06-17 Nec Corp Semiconductor device
DE102019203395A1 (en) 2018-03-20 2019-09-26 Fanuc Corporation Arm structure of a robot as well as robot

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415988A (en) * 1974-12-11 1979-02-06 Saint Gobain Parts using between multiilayer window glass

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415988A (en) * 1974-12-11 1979-02-06 Saint Gobain Parts using between multiilayer window glass

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727408A (en) * 1984-06-11 1988-02-23 Nec Corporation Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor
JPH02303035A (en) * 1989-05-17 1990-12-17 Toshiba Corp Semiconductor device
JPH04170072A (en) * 1990-11-02 1992-06-17 Nec Corp Semiconductor device
JP2689719B2 (en) * 1990-11-02 1997-12-10 日本電気株式会社 Semiconductor device
DE102019203395A1 (en) 2018-03-20 2019-09-26 Fanuc Corporation Arm structure of a robot as well as robot

Also Published As

Publication number Publication date
JPS6348190B2 (en) 1988-09-28

Similar Documents

Publication Publication Date Title
IE32763B1 (en) High speed switching rectifier
JPS5734360A (en) Semiconductor device
JPS5734363A (en) Semiconductor device
JPS5580352A (en) Transistor with high breakdown voltage
JPS5734361A (en) Semiconductor device
JPS5491067A (en) Input protective circuit
JPS56101767A (en) Semiconductor integrated circuit
JPS5734362A (en) Semiconductor device
JPS57206072A (en) Semiconductor device
JPS56148864A (en) Thyristor
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS5737884A (en) Semiconductor device
JPS5660057A (en) Semiconductor device
JPS57208170A (en) Composite transistor
JPS57113276A (en) Semiconductor memory device
JPS54141578A (en) Semiconductor device
JPS5727052A (en) Semiconductor device
JPS52133761A (en) Integrated circuit
JPS5377476A (en) Semiconductor integrated circuit device
JPS5521114A (en) Junction break-down type programmable read-only memory semiconductor device
JPS55138867A (en) Memory device
JPS52109370A (en) Semiconductor device
JPS57122579A (en) Zener diode
JPS57113277A (en) Semiconductor memory device
JPS5715466A (en) Semiconductor device