JPS54143078A - Field effect switching element - Google Patents

Field effect switching element

Info

Publication number
JPS54143078A
JPS54143078A JP5127578A JP5127578A JPS54143078A JP S54143078 A JPS54143078 A JP S54143078A JP 5127578 A JP5127578 A JP 5127578A JP 5127578 A JP5127578 A JP 5127578A JP S54143078 A JPS54143078 A JP S54143078A
Authority
JP
Japan
Prior art keywords
base
gate
dielectric strength
electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5127578A
Other languages
Japanese (ja)
Other versions
JPS6145865B2 (en
Inventor
Susumu Murakami
Yoshio Terasawa
Kenji Miyata
Saburo Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5127578A priority Critical patent/JPS54143078A/en
Publication of JPS54143078A publication Critical patent/JPS54143078A/en
Publication of JPS6145865B2 publication Critical patent/JPS6145865B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To perform bistable and reverse-conduction switching operations, without a commutation failure, in a short ignition time by a small ON voltage, by increasing dv/dt dielectric strength and forward stopping dielectric strength by bilaterally controlling a large current by a low gate voltage. CONSTITUTION:There is buried gate 6 in n<-> base 1, and p<+> and n<+>-type emitters 4 and 3, and 2 and 5 confront mutually. Common electrodes 8 and 9 are provided to both the surfaces. Switches S01 and S02 are opened first and at the time of feeding from electrode 8 to 9, S01 is closed to apply electrode 9 and gate 6 with positive and negative biases VG respectively. As a result, the depletion layer expands from the pn junction between gate 6 and base 1 to channel 7 to stop the main current. At the time of feeding from electrode 9 to 8, the main current is cut off with S02 closed, bilateral switching is done, and p<+> layers 2 and 4 are shorted by n<+> layers 3 and 5, so that forward stopping dielectric strength will increase. Since the main current path during conduction is the diode, the ON voltage is small even if the n base is thick and excessive carriers in the base are discharged quickly, so that not commutation failure will occur.
JP5127578A 1978-04-28 1978-04-28 Field effect switching element Granted JPS54143078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5127578A JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5127578A JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Publications (2)

Publication Number Publication Date
JPS54143078A true JPS54143078A (en) 1979-11-07
JPS6145865B2 JPS6145865B2 (en) 1986-10-09

Family

ID=12882386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5127578A Granted JPS54143078A (en) 1978-04-28 1978-04-28 Field effect switching element

Country Status (1)

Country Link
JP (1) JPS54143078A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191474A (en) * 1987-10-02 1989-04-11 Toyota Autom Loom Works Ltd Semiconductor switching element
US4943840A (en) * 1985-11-29 1990-07-24 Bbc Brown, Boveri & Company, Limited Reverse-conducting thyristor
CN115629233A (en) * 2022-10-17 2023-01-20 国网安徽省电力有限公司电力科学研究院 Switching-on commutation failure judgment method suitable for extra-high voltage converter transformer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943840A (en) * 1985-11-29 1990-07-24 Bbc Brown, Boveri & Company, Limited Reverse-conducting thyristor
JPH0191474A (en) * 1987-10-02 1989-04-11 Toyota Autom Loom Works Ltd Semiconductor switching element
CN115629233A (en) * 2022-10-17 2023-01-20 国网安徽省电力有限公司电力科学研究院 Switching-on commutation failure judgment method suitable for extra-high voltage converter transformer
CN115629233B (en) * 2022-10-17 2023-06-27 国网安徽省电力有限公司电力科学研究院 Method suitable for judging commutation failure of extra-high voltage converter transformer switching-on

Also Published As

Publication number Publication date
JPS6145865B2 (en) 1986-10-09

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