JPS6411367A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS6411367A
JPS6411367A JP16815387A JP16815387A JPS6411367A JP S6411367 A JPS6411367 A JP S6411367A JP 16815387 A JP16815387 A JP 16815387A JP 16815387 A JP16815387 A JP 16815387A JP S6411367 A JPS6411367 A JP S6411367A
Authority
JP
Japan
Prior art keywords
layer
type base
negative
base layer
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16815387A
Other languages
Japanese (ja)
Inventor
Takashi Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16815387A priority Critical patent/JPS6411367A/en
Publication of JPS6411367A publication Critical patent/JPS6411367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect

Abstract

PURPOSE:To improve a turn-off gain, to particularly improve an anode current in an N-type base layer at the time or turning OFF, i.e., the exhausting efficiency of a tail current, and to improve switching characteristic by providing a lattice-like P-type buried layer in an N-type base layer, applying a negative reverse bias to a gate electrode at the time of turning OFF, and simultaneously applying a negative bias also to the P-type buried layer. CONSTITUTION:A lattice-like P-type buried layer 27 substantially parallel to the main face of a substrate is formed in an N-type base layer 21. A negative gate turn OFF voltage VRG to a cathode electrode 31 is applied to a gate electrode 32. Since a negative bias VRG is also applied to the layer 27 at this time, a depletion layer 37 formed in a junction with the layer 21 increases fts spread, the mobility of carrier is interrupted by forming the barrier of a high resistance layer, and remaining carrier exhausting efficiency from the gate electrode is remarkably improved. Since an anode current, i.e., a tail current flowing in the layer 21 is interrupted on the way by the layer 37, the exhausting efficiency of the tail current is improved, a junction between a gate P-type base layer 22 and the layer 21 is reversely biased to be turned OFF.
JP16815387A 1987-07-06 1987-07-06 Gate turn-off thyristor Pending JPS6411367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16815387A JPS6411367A (en) 1987-07-06 1987-07-06 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16815387A JPS6411367A (en) 1987-07-06 1987-07-06 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS6411367A true JPS6411367A (en) 1989-01-13

Family

ID=15862800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16815387A Pending JPS6411367A (en) 1987-07-06 1987-07-06 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS6411367A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6062201A (en) * 1997-05-13 2000-05-16 Denso Corporation Fuel injection control for internal combustion engine
US6085729A (en) * 1997-12-10 2000-07-11 Denso Corporation Fuel injection control for engines responsive to fuel injection timing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650567A (en) * 1979-10-02 1981-05-07 Mitsubishi Electric Corp Semiconductor controlled rectifier
JPS5880866A (en) * 1981-11-10 1983-05-16 Fuji Electric Co Ltd Bidirectional semiconductor switch
JPS6159776A (en) * 1984-08-30 1986-03-27 Semiconductor Res Found Phototrigger thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650567A (en) * 1979-10-02 1981-05-07 Mitsubishi Electric Corp Semiconductor controlled rectifier
JPS5880866A (en) * 1981-11-10 1983-05-16 Fuji Electric Co Ltd Bidirectional semiconductor switch
JPS6159776A (en) * 1984-08-30 1986-03-27 Semiconductor Res Found Phototrigger thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6062201A (en) * 1997-05-13 2000-05-16 Denso Corporation Fuel injection control for internal combustion engine
US6085729A (en) * 1997-12-10 2000-07-11 Denso Corporation Fuel injection control for engines responsive to fuel injection timing

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