JPS57153475A - Multi layer electrode - Google Patents

Multi layer electrode

Info

Publication number
JPS57153475A
JPS57153475A JP3846581A JP3846581A JPS57153475A JP S57153475 A JPS57153475 A JP S57153475A JP 3846581 A JP3846581 A JP 3846581A JP 3846581 A JP3846581 A JP 3846581A JP S57153475 A JPS57153475 A JP S57153475A
Authority
JP
Japan
Prior art keywords
schottky
gaas
vaporized
comes
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3846581A
Other languages
Japanese (ja)
Other versions
JPH0359580B2 (en
Inventor
Masaoki Ishikawa
Asamitsu Tosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3846581A priority Critical patent/JPS57153475A/en
Publication of JPS57153475A publication Critical patent/JPS57153475A/en
Publication of JPH0359580B2 publication Critical patent/JPH0359580B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds

Abstract

PURPOSE:To obtain a multi-gate layer with superb heat resistant of Schottky reverse withstand voltage, by laminating W2N, Au over a metal that comes in Schottky contact with a semiconductor. CONSTITUTION:Over Ga As 10 of electron density 1X10<-7>cm<-3>, 1,000Angstrom of W20 is vaporized at 10<-7>torr and treated with NH3 diluted by N2 at 300-500 deg.C for about ten minutes to form W2N30 on the surface, and Au40 is vaporized. Then a source 50 and a drain 60 electrodes complete a FET. A gate electrode with superb heat resistivity of reverse Schottky withstand voltage is obtained because the presence of the W2N layer prevents the reaction between Au and W that comes in Schotky contact with GaAs and also prevents the reaction with GaAs.
JP3846581A 1981-03-17 1981-03-17 Multi layer electrode Granted JPS57153475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3846581A JPS57153475A (en) 1981-03-17 1981-03-17 Multi layer electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3846581A JPS57153475A (en) 1981-03-17 1981-03-17 Multi layer electrode

Publications (2)

Publication Number Publication Date
JPS57153475A true JPS57153475A (en) 1982-09-22
JPH0359580B2 JPH0359580B2 (en) 1991-09-11

Family

ID=12525994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3846581A Granted JPS57153475A (en) 1981-03-17 1981-03-17 Multi layer electrode

Country Status (1)

Country Link
JP (1) JPS57153475A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181676A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor device
EP0184047A2 (en) * 1984-11-14 1986-06-11 Kabushiki Kaisha Toshiba Field-effect transistor with self-aligned gate and method for its manufacture
JPS61127181A (en) * 1984-11-26 1986-06-14 Fujitsu Ltd Manufacture of field-effect compound semiconductor device
JPS6384154A (en) * 1986-09-29 1988-04-14 Toshiba Corp Manufacture of semiconductor device
JPH01187877A (en) * 1988-01-22 1989-07-27 Toshiba Corp Compound semiconductor device and its manufacture
JPH07161659A (en) * 1993-12-07 1995-06-23 Nec Corp Semiconductor device and its manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181676A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Semiconductor device
EP0184047A2 (en) * 1984-11-14 1986-06-11 Kabushiki Kaisha Toshiba Field-effect transistor with self-aligned gate and method for its manufacture
US4951121A (en) * 1984-11-14 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor device with a 3-ply gate electrode
JPS61127181A (en) * 1984-11-26 1986-06-14 Fujitsu Ltd Manufacture of field-effect compound semiconductor device
JPS6384154A (en) * 1986-09-29 1988-04-14 Toshiba Corp Manufacture of semiconductor device
JPH01187877A (en) * 1988-01-22 1989-07-27 Toshiba Corp Compound semiconductor device and its manufacture
JPH07161659A (en) * 1993-12-07 1995-06-23 Nec Corp Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPH0359580B2 (en) 1991-09-11

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