JPS53125775A - Gallium arsenide schottky barrier type field effect transistor and its manufacture - Google Patents

Gallium arsenide schottky barrier type field effect transistor and its manufacture

Info

Publication number
JPS53125775A
JPS53125775A JP4051177A JP4051177A JPS53125775A JP S53125775 A JPS53125775 A JP S53125775A JP 4051177 A JP4051177 A JP 4051177A JP 4051177 A JP4051177 A JP 4051177A JP S53125775 A JPS53125775 A JP S53125775A
Authority
JP
Japan
Prior art keywords
manufacture
schottky barrier
barrier type
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4051177A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4051177A priority Critical patent/JPS53125775A/en
Publication of JPS53125775A publication Critical patent/JPS53125775A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To manufacture a GaAs Schottky barrier type FET less in the breakdown due to discharge between electrodes and the deterioration due to electrochemical corrosion, by forming the gate electrode with Al and covering the side surface with fine anodic oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP4051177A 1977-04-08 1977-04-08 Gallium arsenide schottky barrier type field effect transistor and its manufacture Pending JPS53125775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051177A JPS53125775A (en) 1977-04-08 1977-04-08 Gallium arsenide schottky barrier type field effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051177A JPS53125775A (en) 1977-04-08 1977-04-08 Gallium arsenide schottky barrier type field effect transistor and its manufacture

Publications (1)

Publication Number Publication Date
JPS53125775A true JPS53125775A (en) 1978-11-02

Family

ID=12582559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051177A Pending JPS53125775A (en) 1977-04-08 1977-04-08 Gallium arsenide schottky barrier type field effect transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS53125775A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS5643767A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS5643767A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

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