JPS5643767A - Fet transistor and method of producing the same - Google Patents

Fet transistor and method of producing the same

Info

Publication number
JPS5643767A
JPS5643767A JP11967679A JP11967679A JPS5643767A JP S5643767 A JPS5643767 A JP S5643767A JP 11967679 A JP11967679 A JP 11967679A JP 11967679 A JP11967679 A JP 11967679A JP S5643767 A JPS5643767 A JP S5643767A
Authority
JP
Japan
Prior art keywords
layer
gaas
oxide
electrode
converted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11967679A
Other languages
Japanese (ja)
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11967679A priority Critical patent/JPS5643767A/en
Publication of JPS5643767A publication Critical patent/JPS5643767A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve high frequency characteristic with a shortened gate length while imparting a proper surface protection with the proximity of a gates lectrode formed into a double layer insulator by transforming the side of a gate electrode material of an FET transistor. CONSTITUTION:An enabling layer 2 comprising an N type conductive layer is laminated on a semi-insulated GaAs substrate 1. Then, a metal germanium alloys 3 and 4 react with the enabling layer 2 by heat treatment in a nonrectified contact. An Al51 is formed between a source electrode 3 and a drain electrode 4 by evaporation. The Al51 is etched to form Al52 and 53. Then, the surface of the Al exposed by electrode oxidation is converted into an aluminum oxide 7 and the surface layer of GaAs contacting the aluminum oxide 7 is converted into a GaAs oxide. Insulating the side of a gate electrode can reduce the gate length beyond the limit of the photoetching while the insulating film contains a substrate oxide thereby stabilizing te characteristics.
JP11967679A 1979-09-17 1979-09-17 Fet transistor and method of producing the same Pending JPS5643767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11967679A JPS5643767A (en) 1979-09-17 1979-09-17 Fet transistor and method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11967679A JPS5643767A (en) 1979-09-17 1979-09-17 Fet transistor and method of producing the same

Publications (1)

Publication Number Publication Date
JPS5643767A true JPS5643767A (en) 1981-04-22

Family

ID=14767288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11967679A Pending JPS5643767A (en) 1979-09-17 1979-09-17 Fet transistor and method of producing the same

Country Status (1)

Country Link
JP (1) JPS5643767A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012984A (en) * 1973-06-01 1975-02-10
JPS52108777A (en) * 1976-03-09 1977-09-12 Nec Corp Field-effect transistor for schottky barrier layer
JPS5378A (en) * 1976-06-23 1978-01-05 Nec Corp Schottky barrier type field effect transistor
JPS53125775A (en) * 1977-04-08 1978-11-02 Nec Corp Gallium arsenide schottky barrier type field effect transistor and its manufacture
JPS54588A (en) * 1977-06-03 1979-01-05 Toshiba Corp Schottky barrier gate type field effect transistor
JPS54126483A (en) * 1978-03-24 1979-10-01 Nec Corp Schottky barrier gate field effect transistor and its production

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012984A (en) * 1973-06-01 1975-02-10
JPS52108777A (en) * 1976-03-09 1977-09-12 Nec Corp Field-effect transistor for schottky barrier layer
JPS5378A (en) * 1976-06-23 1978-01-05 Nec Corp Schottky barrier type field effect transistor
JPS53125775A (en) * 1977-04-08 1978-11-02 Nec Corp Gallium arsenide schottky barrier type field effect transistor and its manufacture
JPS54588A (en) * 1977-06-03 1979-01-05 Toshiba Corp Schottky barrier gate type field effect transistor
JPS54126483A (en) * 1978-03-24 1979-10-01 Nec Corp Schottky barrier gate field effect transistor and its production

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