JPS5481081A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5481081A JPS5481081A JP14898377A JP14898377A JPS5481081A JP S5481081 A JPS5481081 A JP S5481081A JP 14898377 A JP14898377 A JP 14898377A JP 14898377 A JP14898377 A JP 14898377A JP S5481081 A JPS5481081 A JP S5481081A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- electrode
- drain
- specific resistance
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To increase the gate-drain dielectric strength by provding the gate electrode on the insulated part of the lower specific resistance layer laminated on the active layer plus the source and drain electrodes provided on the non-insulated region.
CONSTITUTION: The n--type GaAs layer 12 and n+-type GaAs layer 13 are formed on semiinsulator GaAs substrate 11 doped into the chrome featuring the specific resistance of about 108Ωcm. Then an insulating process is carried out through the plasma oxidation onto the surface excluding the area where the gate is to be formed. Thus, oxide film 130 is formed. After this, the source electrode, the drain electrode 23 and the gate electrode are formed through the selective etching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14898377A JPS5481081A (en) | 1977-12-12 | 1977-12-12 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14898377A JPS5481081A (en) | 1977-12-12 | 1977-12-12 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5481081A true JPS5481081A (en) | 1979-06-28 |
Family
ID=15465061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14898377A Pending JPS5481081A (en) | 1977-12-12 | 1977-12-12 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5481081A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011187728A (en) * | 2010-03-09 | 2011-09-22 | Fujitsu Ltd | Compound semiconductor device and method of manufacturing the same |
-
1977
- 1977-12-12 JP JP14898377A patent/JPS5481081A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011187728A (en) * | 2010-03-09 | 2011-09-22 | Fujitsu Ltd | Compound semiconductor device and method of manufacturing the same |
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