JPS5481081A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5481081A
JPS5481081A JP14898377A JP14898377A JPS5481081A JP S5481081 A JPS5481081 A JP S5481081A JP 14898377 A JP14898377 A JP 14898377A JP 14898377 A JP14898377 A JP 14898377A JP S5481081 A JPS5481081 A JP S5481081A
Authority
JP
Japan
Prior art keywords
gate
electrode
drain
specific resistance
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14898377A
Other languages
Japanese (ja)
Inventor
Takashi Mimura
Hirotsugu Kusakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14898377A priority Critical patent/JPS5481081A/en
Publication of JPS5481081A publication Critical patent/JPS5481081A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the gate-drain dielectric strength by provding the gate electrode on the insulated part of the lower specific resistance layer laminated on the active layer plus the source and drain electrodes provided on the non-insulated region.
CONSTITUTION: The n--type GaAs layer 12 and n+-type GaAs layer 13 are formed on semiinsulator GaAs substrate 11 doped into the chrome featuring the specific resistance of about 108Ωcm. Then an insulating process is carried out through the plasma oxidation onto the surface excluding the area where the gate is to be formed. Thus, oxide film 130 is formed. After this, the source electrode, the drain electrode 23 and the gate electrode are formed through the selective etching.
COPYRIGHT: (C)1979,JPO&Japio
JP14898377A 1977-12-12 1977-12-12 Field effect transistor Pending JPS5481081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14898377A JPS5481081A (en) 1977-12-12 1977-12-12 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14898377A JPS5481081A (en) 1977-12-12 1977-12-12 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5481081A true JPS5481081A (en) 1979-06-28

Family

ID=15465061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14898377A Pending JPS5481081A (en) 1977-12-12 1977-12-12 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5481081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187728A (en) * 2010-03-09 2011-09-22 Fujitsu Ltd Compound semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187728A (en) * 2010-03-09 2011-09-22 Fujitsu Ltd Compound semiconductor device and method of manufacturing the same

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