JPS5229183A - Method for production of semi-conductive element - Google Patents
Method for production of semi-conductive elementInfo
- Publication number
- JPS5229183A JPS5229183A JP50105771A JP10577175A JPS5229183A JP S5229183 A JPS5229183 A JP S5229183A JP 50105771 A JP50105771 A JP 50105771A JP 10577175 A JP10577175 A JP 10577175A JP S5229183 A JPS5229183 A JP S5229183A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- production
- conductive element
- pentration
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: The Mo is made to presence on the Au-Ge-Ni electrode which is formed to gain an ohmic contact with the n-type Ga,As and to block the pentration of Au-Ge to active layer from Au-Ge or Ni-Au-Ge solder which are formed on the Mo.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50105771A JPS5229183A (en) | 1975-09-01 | 1975-09-01 | Method for production of semi-conductive element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50105771A JPS5229183A (en) | 1975-09-01 | 1975-09-01 | Method for production of semi-conductive element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5229183A true JPS5229183A (en) | 1977-03-04 |
Family
ID=14416418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50105771A Pending JPS5229183A (en) | 1975-09-01 | 1975-09-01 | Method for production of semi-conductive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5229183A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316209A (en) * | 1979-08-31 | 1982-02-16 | International Business Machines Corporation | Metal/silicon contact and methods of fabrication thereof |
JPS6144492A (en) * | 1985-07-22 | 1986-03-04 | Hitachi Ltd | Semiconductor device |
US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
-
1975
- 1975-09-01 JP JP50105771A patent/JPS5229183A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316209A (en) * | 1979-08-31 | 1982-02-16 | International Business Machines Corporation | Metal/silicon contact and methods of fabrication thereof |
JPS6144492A (en) * | 1985-07-22 | 1986-03-04 | Hitachi Ltd | Semiconductor device |
US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
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