JPS5229183A - Method for production of semi-conductive element - Google Patents

Method for production of semi-conductive element

Info

Publication number
JPS5229183A
JPS5229183A JP50105771A JP10577175A JPS5229183A JP S5229183 A JPS5229183 A JP S5229183A JP 50105771 A JP50105771 A JP 50105771A JP 10577175 A JP10577175 A JP 10577175A JP S5229183 A JPS5229183 A JP S5229183A
Authority
JP
Japan
Prior art keywords
semi
production
conductive element
pentration
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50105771A
Other languages
Japanese (ja)
Inventor
Osamu Ishihara
Hiroshi Sawano
Kazuo Nishitani
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50105771A priority Critical patent/JPS5229183A/en
Publication of JPS5229183A publication Critical patent/JPS5229183A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: The Mo is made to presence on the Au-Ge-Ni electrode which is formed to gain an ohmic contact with the n-type Ga,As and to block the pentration of Au-Ge to active layer from Au-Ge or Ni-Au-Ge solder which are formed on the Mo.
COPYRIGHT: (C)1977,JPO&Japio
JP50105771A 1975-09-01 1975-09-01 Method for production of semi-conductive element Pending JPS5229183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50105771A JPS5229183A (en) 1975-09-01 1975-09-01 Method for production of semi-conductive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50105771A JPS5229183A (en) 1975-09-01 1975-09-01 Method for production of semi-conductive element

Publications (1)

Publication Number Publication Date
JPS5229183A true JPS5229183A (en) 1977-03-04

Family

ID=14416418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50105771A Pending JPS5229183A (en) 1975-09-01 1975-09-01 Method for production of semi-conductive element

Country Status (1)

Country Link
JP (1) JPS5229183A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS6144492A (en) * 1985-07-22 1986-03-04 Hitachi Ltd Semiconductor device
US4998158A (en) * 1987-06-01 1991-03-05 Motorola, Inc. Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4316209A (en) * 1979-08-31 1982-02-16 International Business Machines Corporation Metal/silicon contact and methods of fabrication thereof
JPS6144492A (en) * 1985-07-22 1986-03-04 Hitachi Ltd Semiconductor device
US4998158A (en) * 1987-06-01 1991-03-05 Motorola, Inc. Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier

Similar Documents

Publication Publication Date Title
JPS5284981A (en) Production of insulated gate type semiconductor device
JPS5229183A (en) Method for production of semi-conductive element
JPS5269284A (en) Semiconductor device
JPS54880A (en) Manufacture of semiconductor device
JPS5272570A (en) Formation of electrode of semiconductor deviced
JPS5425678A (en) Field effect transistor of ultra high frequency and high output
JPS5276890A (en) Production of g#a#-a#a# hetero-junction semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS52100877A (en) Field effect transistor of junction type
JPS52127157A (en) Manufacture of semiconductor
JPS5237766A (en) Semiconductor device
JPS5263067A (en) Production of semiconductor device
JPS5321581A (en) Production of gaas schottky barrier gate type field effect transistors
JPS5291382A (en) Insulating gate type field effect transistor
JPS5256874A (en) Production of semiconductive integrated circuit
JPS51130169A (en) Semiconductor device
JPS5296878A (en) Manufacture of semiconductor laser element
JPS52126167A (en) Formation of electrode for semiconductor device
JPS5211772A (en) Semiconductor device
JPS52147077A (en) Field-effect transisitor
JPS5376770A (en) Production of insulated gate field effect transistor
JPS52100886A (en) Emission indicator and its production
JPS5367372A (en) Mos-type field effect transistor
JPS5228885A (en) Method for production of semiconductive emitter device
JPS52122080A (en) Forming methods of ohmic electrodes