JPS5276890A - Production of g#a#-a#a# hetero-junction semiconductor device - Google Patents

Production of g#a#-a#a# hetero-junction semiconductor device

Info

Publication number
JPS5276890A
JPS5276890A JP50152855A JP15285575A JPS5276890A JP S5276890 A JPS5276890 A JP S5276890A JP 50152855 A JP50152855 A JP 50152855A JP 15285575 A JP15285575 A JP 15285575A JP S5276890 A JPS5276890 A JP S5276890A
Authority
JP
Japan
Prior art keywords
hetero
production
semiconductor device
junction semiconductor
gaalas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50152855A
Other languages
Japanese (ja)
Other versions
JPS5334476B2 (en
Inventor
Haruki Kurihara
Motoyuki Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP50152855A priority Critical patent/JPS5276890A/en
Publication of JPS5276890A publication Critical patent/JPS5276890A/en
Publication of JPS5334476B2 publication Critical patent/JPS5334476B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To gain the good reproducible and good characteristic semiconductive LASER by using the oxidized membrane of GaAlAs as the mask, when the hetero-junction semiconductive is formed by embedding the GaAs layer in the GaAlAs layer.
COPYRIGHT: (C)1977,JPO&Japio
JP50152855A 1975-12-23 1975-12-23 Production of g#a#-a#a# hetero-junction semiconductor device Granted JPS5276890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50152855A JPS5276890A (en) 1975-12-23 1975-12-23 Production of g#a#-a#a# hetero-junction semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50152855A JPS5276890A (en) 1975-12-23 1975-12-23 Production of g#a#-a#a# hetero-junction semiconductor device

Publications (2)

Publication Number Publication Date
JPS5276890A true JPS5276890A (en) 1977-06-28
JPS5334476B2 JPS5334476B2 (en) 1978-09-20

Family

ID=15549589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50152855A Granted JPS5276890A (en) 1975-12-23 1975-12-23 Production of g#a#-a#a# hetero-junction semiconductor device

Country Status (1)

Country Link
JP (1) JPS5276890A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427670A (en) * 1977-07-30 1979-03-01 Teves Gmbh Alfred Fluid pressure brake booster
JPH02177489A (en) * 1988-12-28 1990-07-10 Res Dev Corp Of Japan Manufacture of surface emitting type semiconductor laser device
US5028562A (en) * 1988-02-26 1991-07-02 Mitsubishi Denki Kabushiki Kaisha Method for producing a semiconductor laser using selective epitaxy
US5284791A (en) * 1991-08-09 1994-02-08 Nec Corporation Method of making tunable semiconductor laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579055A (en) * 1968-08-05 1971-05-18 Bell & Howell Co Semiconductor laser device and method for it{3 s fabrication
JPS4924084A (en) * 1972-06-26 1974-03-04
JPS4987278A (en) * 1972-12-23 1974-08-21

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579055A (en) * 1968-08-05 1971-05-18 Bell & Howell Co Semiconductor laser device and method for it{3 s fabrication
JPS4924084A (en) * 1972-06-26 1974-03-04
JPS4987278A (en) * 1972-12-23 1974-08-21

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427670A (en) * 1977-07-30 1979-03-01 Teves Gmbh Alfred Fluid pressure brake booster
JPS5914383B2 (en) * 1977-07-30 1984-04-04 アルフレツド・テヴエス・ゲ−エムベ−ハ− fluid pressure brake booster
US5028562A (en) * 1988-02-26 1991-07-02 Mitsubishi Denki Kabushiki Kaisha Method for producing a semiconductor laser using selective epitaxy
JPH02177489A (en) * 1988-12-28 1990-07-10 Res Dev Corp Of Japan Manufacture of surface emitting type semiconductor laser device
US5284791A (en) * 1991-08-09 1994-02-08 Nec Corporation Method of making tunable semiconductor laser

Also Published As

Publication number Publication date
JPS5334476B2 (en) 1978-09-20

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