JPS52100886A - Emission indicator and its production - Google Patents

Emission indicator and its production

Info

Publication number
JPS52100886A
JPS52100886A JP1764676A JP1764676A JPS52100886A JP S52100886 A JPS52100886 A JP S52100886A JP 1764676 A JP1764676 A JP 1764676A JP 1764676 A JP1764676 A JP 1764676A JP S52100886 A JPS52100886 A JP S52100886A
Authority
JP
Japan
Prior art keywords
electric conduction
conduction region
production
emission indicator
opposite electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1764676A
Other languages
Japanese (ja)
Inventor
Takuhiro Ono
Masafumi Hashimoto
Michio Matsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1764676A priority Critical patent/JPS52100886A/en
Publication of JPS52100886A publication Critical patent/JPS52100886A/en
Pending legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE: To produce emission indicator of improved yield for light emission by making ohmic electrode, which contacts with opposite electric conduction region against the substrate and with insulator film for selective diffusion, from semiconductor, which has nearly equal or higher values of band gap as compared with that of the opposite electric conduction region. In this device, light emitted near the junction canbe taken out without any disturbance by the electrode materials.
COPYRIGHT: (C)1977,JPO&Japio
JP1764676A 1976-02-19 1976-02-19 Emission indicator and its production Pending JPS52100886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1764676A JPS52100886A (en) 1976-02-19 1976-02-19 Emission indicator and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1764676A JPS52100886A (en) 1976-02-19 1976-02-19 Emission indicator and its production

Publications (1)

Publication Number Publication Date
JPS52100886A true JPS52100886A (en) 1977-08-24

Family

ID=11949610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1764676A Pending JPS52100886A (en) 1976-02-19 1976-02-19 Emission indicator and its production

Country Status (1)

Country Link
JP (1) JPS52100886A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5581568A (en) * 1978-12-12 1980-06-19 Taka Shokuhin Kogyo Kk Freshness retention of egg

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5581568A (en) * 1978-12-12 1980-06-19 Taka Shokuhin Kogyo Kk Freshness retention of egg

Similar Documents

Publication Publication Date Title
JPS5228887A (en) Semiconductive emitter device
JPS5351985A (en) Semiconductor wiring constitution
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS51112187A (en) Processing method of semiconductor equipment
JPS52100886A (en) Emission indicator and its production
JPS5242384A (en) Semiconductor device
JPS524167A (en) Manufacturing process of p-n junction type solid element
JPS5274280A (en) Semiconductor device and its production
JPS5220769A (en) Longitudinal semi-conductor unit
JPS51130169A (en) Semiconductor device
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS51148380A (en) Manufacturing method of electric field semiconductor device
JPS5296878A (en) Manufacture of semiconductor laser element
JPS5367389A (en) Production of semiconductor laser
JPS5313883A (en) Semiconductor device and its production
JPS5211772A (en) Semiconductor device
JPS5228885A (en) Method for production of semiconductive emitter device
JPS52104072A (en) High voltage semiconductor device
JPS5266372A (en) Manufacture of silicon single crystal
JPS5234667A (en) Semiconductor device
JPS51138166A (en) Production method of semiconductor device
JPS5349942A (en) Manufacture of semiconductor device
JPS5275977A (en) Production of compound semiconductor device
JPS5264886A (en) Production of semiconductor device