FR2322461A1 - Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377) - Google Patents

Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377)

Info

Publication number
FR2322461A1
FR2322461A1 FR7625764A FR7625764A FR2322461A1 FR 2322461 A1 FR2322461 A1 FR 2322461A1 FR 7625764 A FR7625764 A FR 7625764A FR 7625764 A FR7625764 A FR 7625764A FR 2322461 A1 FR2322461 A1 FR 2322461A1
Authority
FR
France
Prior art keywords
layer
thin
liq
contg
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7625764A
Other languages
French (fr)
Other versions
FR2322461B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2322461A1 publication Critical patent/FR2322461A1/en
Application granted granted Critical
Publication of FR2322461B1 publication Critical patent/FR2322461B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The transistor on an insulating substrate comprises a semiconductor layer; a thin In layer formed on >=1 side of the semiconductor layer; source and drain-contacts overlapping the opposite sides of the semiconductive layer comprising In layer layers topped by Cu layers; an insulating layer placed on the semiconductive layer and on parts of the source- and drain-contacts; and a steering electrode located on the insulating layer above the semiconductive layer. Another steering electrode is placed on the substrate and is covered by an insulating layer. Both electrodes can be electrically connected. The pref. semiconductive layer consists of CdSe. The transistor has increased transconductances, reduced charge retention and improve-high potential properties.
FR7625764A 1975-08-29 1976-08-25 Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377) Granted FR2322461A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60913975A 1975-08-29 1975-08-29

Publications (2)

Publication Number Publication Date
FR2322461A1 true FR2322461A1 (en) 1977-03-25
FR2322461B1 FR2322461B1 (en) 1982-11-19

Family

ID=24439511

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7625764A Granted FR2322461A1 (en) 1975-08-29 1976-08-25 Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377)

Country Status (4)

Country Link
JP (1) JPS5235585A (en)
DE (1) DE2637481A1 (en)
FR (1) FR2322461A1 (en)
NL (1) NL7608958A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688354A (en) * 1979-12-20 1981-07-17 Toshiba Corp Semiconductor integrated circuit device
JPS5788943U (en) * 1980-11-20 1982-06-01
JPS5788945U (en) * 1980-11-20 1982-06-01
JPS5788944U (en) * 1980-11-20 1982-06-01
JPS5790977A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Double-layer gate polysilicon mos transistor
JPS5828780A (en) * 1981-08-12 1983-02-19 富士通株式会社 Display

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1572063A (en) * 1967-08-04 1969-06-20
FR2019295A1 (en) * 1968-07-15 1970-07-03 Ncr Co

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3616527A (en) * 1968-07-15 1971-11-02 Ncr Co Method of accurately doping a semiconductor material layer
US3840695A (en) * 1972-10-10 1974-10-08 Westinghouse Electric Corp Liquid crystal image display panel with integrated addressing circuitry

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1572063A (en) * 1967-08-04 1969-06-20
GB1161647A (en) * 1967-08-04 1969-08-13 Rca Corp Thin Film Field-Effect Solid State Devices
FR2019295A1 (en) * 1968-07-15 1970-07-03 Ncr Co

Also Published As

Publication number Publication date
FR2322461B1 (en) 1982-11-19
NL7608958A (en) 1977-03-02
DE2637481C2 (en) 1987-12-17
DE2637481A1 (en) 1977-03-03
JPS5235585A (en) 1977-03-18

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Legal Events

Date Code Title Description
ST Notification of lapse