FR1572063A - - Google Patents
Info
- Publication number
- FR1572063A FR1572063A FR1572063DA FR1572063A FR 1572063 A FR1572063 A FR 1572063A FR 1572063D A FR1572063D A FR 1572063DA FR 1572063 A FR1572063 A FR 1572063A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65854167A | 1967-08-04 | 1967-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1572063A true FR1572063A (en) | 1969-06-20 |
Family
ID=24641673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1572063D Expired FR1572063A (en) | 1967-08-04 | 1968-07-18 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1764756B2 (en) |
FR (1) | FR1572063A (en) |
GB (1) | GB1161647A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2322461A1 (en) * | 1975-08-29 | 1977-03-25 | Westinghouse Electric Corp | Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2704312A1 (en) * | 1976-08-20 | 1978-02-23 | Westinghouse Electric Corp | Thin film transistor contg. indium in semiconductor layer - pref. of cadmium selenide to increase stability and transconductance |
US4115799A (en) * | 1977-01-26 | 1978-09-19 | Westinghouse Electric Corp. | Thin film copper transition between aluminum and indium copper films |
JPS58100461A (en) * | 1981-12-10 | 1983-06-15 | Japan Electronic Ind Dev Assoc<Jeida> | Manufacture of thin-film transistor |
-
1968
- 1968-07-15 GB GB33569/68A patent/GB1161647A/en not_active Expired
- 1968-07-18 FR FR1572063D patent/FR1572063A/fr not_active Expired
- 1968-07-31 DE DE19681764756 patent/DE1764756B2/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2322461A1 (en) * | 1975-08-29 | 1977-03-25 | Westinghouse Electric Corp | Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377) |
Also Published As
Publication number | Publication date |
---|---|
DE1764756A1 (en) | 1972-01-13 |
DE1764756B2 (en) | 1973-07-19 |
GB1161647A (en) | 1969-08-13 |
DE1764756C3 (en) | 1974-02-21 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |