GB1161647A - Thin Film Field-Effect Solid State Devices - Google Patents

Thin Film Field-Effect Solid State Devices

Info

Publication number
GB1161647A
GB1161647A GB33569/68A GB3356968A GB1161647A GB 1161647 A GB1161647 A GB 1161647A GB 33569/68 A GB33569/68 A GB 33569/68A GB 3356968 A GB3356968 A GB 3356968A GB 1161647 A GB1161647 A GB 1161647A
Authority
GB
United Kingdom
Prior art keywords
aluminium
layer
vapour
plasma
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33569/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1161647A publication Critical patent/GB1161647A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Abstract

1,161,647. Semi-conductor devices. RADIO CORPORATION OF AMERICA. 15 July, 1968 [4 Aug., 1967], No. 33569/68. Heading H1K. In a thin film FET the gate insulation comprises a layer of plasma-anodized aluminium oxide. A shown, Fig. 2, an aluminium gate electrode 14 is vapour-deposited on an insulating substrate 12 which may be of ceramic, glass or quartz, and a layer 16 of aluminium oxide is formed by plasma-anodizing the aluminium. A semi-conductor layer 18 of cadmium selenide is vapour-deposited over the insulation and source and drain electrodes 20, 22 of indium are then vapour-deposited. The gate electrode has a lateral extension (24, Fig. 1) which is masked during the formation of the insulating layer to provide a gate contact. The masking can be performed by contacting the extension with a probe by means of which the aluminium film is positively biased relative to an anode which together with a cathode produces a glow discharge in an atmosphere of dry oxygen to plasma-anodize the aluminium.
GB33569/68A 1967-08-04 1968-07-15 Thin Film Field-Effect Solid State Devices Expired GB1161647A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65854167A 1967-08-04 1967-08-04

Publications (1)

Publication Number Publication Date
GB1161647A true GB1161647A (en) 1969-08-13

Family

ID=24641673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33569/68A Expired GB1161647A (en) 1967-08-04 1968-07-15 Thin Film Field-Effect Solid State Devices

Country Status (3)

Country Link
DE (1) DE1764756B2 (en)
FR (1) FR1572063A (en)
GB (1) GB1161647A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2322461A1 (en) * 1975-08-29 1977-03-25 Westinghouse Electric Corp Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377)
FR2378355A1 (en) * 1977-01-26 1978-08-18 Westinghouse Electric Corp TRANSITION FILM, THIN, BETWEEN ALUMINUM FILM AND INDIUM-COPPER FILM

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2704312A1 (en) * 1976-08-20 1978-02-23 Westinghouse Electric Corp Thin film transistor contg. indium in semiconductor layer - pref. of cadmium selenide to increase stability and transconductance
JPS58100461A (en) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> Manufacture of thin-film transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2322461A1 (en) * 1975-08-29 1977-03-25 Westinghouse Electric Corp Thin-layer FET for steering display units - contg. liq. crystals or electroluminescent media(NL020377)
FR2378355A1 (en) * 1977-01-26 1978-08-18 Westinghouse Electric Corp TRANSITION FILM, THIN, BETWEEN ALUMINUM FILM AND INDIUM-COPPER FILM

Also Published As

Publication number Publication date
DE1764756C3 (en) 1974-02-21
DE1764756A1 (en) 1972-01-13
FR1572063A (en) 1969-06-20
DE1764756B2 (en) 1973-07-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees