JPS5676547A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5676547A
JPS5676547A JP15342079A JP15342079A JPS5676547A JP S5676547 A JPS5676547 A JP S5676547A JP 15342079 A JP15342079 A JP 15342079A JP 15342079 A JP15342079 A JP 15342079A JP S5676547 A JPS5676547 A JP S5676547A
Authority
JP
Japan
Prior art keywords
compound semiconductor
layer
optical
elements
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15342079A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15342079A priority Critical patent/JPS5676547A/en
Publication of JPS5676547A publication Critical patent/JPS5676547A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Abstract

PURPOSE:To form a semiconductor devic capable of high speed operation optical IC by providing active elements and passive elements within a compound semiconductor layer formed on an insulating substrate. CONSTITUTION:An N<-> type GaAs crystalline layer 2 and an N type GaAs crystalline layer 3 are sequentially formed on a sapphire insulating substrate 1. Aluminum is evaporated on the layer 3 thereby forming a gate electrode 4, and source and drain electrodes 5 and 6 are formed with Au-Ge alloy and metal. An insulating film 7 is covered thereon, and wires 8 for connecting the electrodes of respective GaAs FETs are formed through windows of the film 7. Thus, the insular GaAs FETs can be readily isolated between elements. Accordingly, there can be obtained a high speed operable semiconductor device by using high electron mobility compound semiconductor. Since the compound semiconductor has high optical characteristics, there can also be formed an optical IC.
JP15342079A 1979-11-27 1979-11-27 Semiconductor device Pending JPS5676547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15342079A JPS5676547A (en) 1979-11-27 1979-11-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15342079A JPS5676547A (en) 1979-11-27 1979-11-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5676547A true JPS5676547A (en) 1981-06-24

Family

ID=15562104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15342079A Pending JPS5676547A (en) 1979-11-27 1979-11-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5676547A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041393A (en) * 1988-12-28 1991-08-20 At&T Bell Laboratories Fabrication of GaAs integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041393A (en) * 1988-12-28 1991-08-20 At&T Bell Laboratories Fabrication of GaAs integrated circuits

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