GB1181345A - Thin Film Active Elements - Google Patents
Thin Film Active ElementsInfo
- Publication number
- GB1181345A GB1181345A GB25268/68A GB2526868A GB1181345A GB 1181345 A GB1181345 A GB 1181345A GB 25268/68 A GB25268/68 A GB 25268/68A GB 2526868 A GB2526868 A GB 2526868A GB 1181345 A GB1181345 A GB 1181345A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cathode
- grid
- layer
- emission
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
1,181,345. Semi-conductor devices. TRW INC. 27 May, 1968 [1 June, 1967], No. 25268/68. Heading H1K. 5 A thin film device comprises a conductive grid disposed in a layer of insulating material between anode and cathode layers. Means other than modification of the potential barrier between cathode and insulator are provided to cause emission of electrons from the cathode with the anode and grid biased positively and negatively respectively relative to the cathode. Thus the cathode may be made photo-emissive or, as in the preferred embodiment (Fig. 3a) emission is effected with the aid of a further electrode 50 spaced from the cathode layer 54 by a layer 52 of insulation thin enough to permit tunneling and biased negatively with respect to it by a constant current circuit. Emission is thus made independent of grid potential, enabling a greatly enhanced current transfer ratio to be obtained by operating with the grid biased negatively in contrast to prior devices. The device is operable to temperatures of 500 C.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64296967A | 1967-06-01 | 1967-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1181345A true GB1181345A (en) | 1970-02-11 |
Family
ID=24578807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB25268/68A Expired GB1181345A (en) | 1967-06-01 | 1968-05-27 | Thin Film Active Elements |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1573639A (en) |
| GB (1) | GB1181345A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555445A (en) * | 2020-04-23 | 2021-10-26 | 北京大学 | On-chip triode, manufacturing method thereof and integrated circuit |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3748501A (en) * | 1971-04-30 | 1973-07-24 | Energy Conversion Devices Inc | Multi-terminal amorphous electronic control device |
| EP0075679A3 (en) * | 1981-09-25 | 1985-01-09 | Rockwell International Corporation | Simim electron devices |
| US4752812A (en) * | 1987-01-12 | 1988-06-21 | International Business Machines Corporation | Permeable-base transistor |
-
1968
- 1968-05-27 GB GB25268/68A patent/GB1181345A/en not_active Expired
- 1968-07-16 FR FR1573639D patent/FR1573639A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555445A (en) * | 2020-04-23 | 2021-10-26 | 北京大学 | On-chip triode, manufacturing method thereof and integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1573639A (en) | 1969-07-04 |
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