GB1069536A - Improvements in solid-state electron source - Google Patents

Improvements in solid-state electron source

Info

Publication number
GB1069536A
GB1069536A GB31432/64A GB3143264A GB1069536A GB 1069536 A GB1069536 A GB 1069536A GB 31432/64 A GB31432/64 A GB 31432/64A GB 3143264 A GB3143264 A GB 3143264A GB 1069536 A GB1069536 A GB 1069536A
Authority
GB
United Kingdom
Prior art keywords
layer
electron
electron source
antimony
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31432/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1069536A publication Critical patent/GB1069536A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

1,069,536. Cathodes; semi-conductor devices. GENERAL ELECTRIC CO. Aug. 4, 1964 [Aug 5, 1963], No. 31432/64. Headings H1D and H1K. An electron source employing the tunnel effect comprises two layers of semi-conductive material 5, 6 separated by an insulating layer 7 having a thickness of the order of, or less than, the mean free path of an electron in the insulating material, an electric field being applied thereacross. -As shown, the electron source is supported on an envelope projection 3 of a discharge device, e.g. a valve, mass spectrograph, ion gauge, cathode-ray tube, magnetron or klystron, and comprises a layer 5 of N-type silicon, a silicon dioxide layer 7, 100 Š thick, and a layer 6 having a low electron affinity and a large diffusion length for high energy electrons, of Cs 3 Sb, Rb 3 Sb, Rb 2 Te, K 3 Sb, or (Cs)Na 2 KSb. A potential difference of 1 to 10 volts is applied across layers 5, 7, 6, and may be modulated to control electron emission. A conducting grid may be applied over layer 6 to improve its lateral conductivity. The N-type layer 5 may be produced from a silicon body by diffusion therein of antimony, arsenic or phosphorus, layer 7 being formed by subsequent oxidation, and layer 6 by vapour deposition of antimony in a caesium atmosphere.
GB31432/64A 1963-08-05 1964-08-04 Improvements in solid-state electron source Expired GB1069536A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US299995A US3214629A (en) 1963-08-05 1963-08-05 Solid-state electron source

Publications (1)

Publication Number Publication Date
GB1069536A true GB1069536A (en) 1967-05-17

Family

ID=23157212

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31432/64A Expired GB1069536A (en) 1963-08-05 1964-08-04 Improvements in solid-state electron source

Country Status (3)

Country Link
US (1) US3214629A (en)
DE (1) DE1281587B (en)
GB (1) GB1069536A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317771A (en) * 1963-10-31 1967-05-02 Varian Associates Photo-emissive electron device
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
US3706920A (en) * 1971-03-18 1972-12-19 Us Army Tunnel electron emitter cathode
CN106252179A (en) 2016-08-29 2016-12-21 北京大学 A kind of micro electric component based on resistive material and array thereof and implementation method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1204367A (en) * 1958-03-24 1960-01-26 Csf Semiconductor cold thermoelectronic cathode
US3056073A (en) * 1960-02-15 1962-09-25 California Inst Res Found Solid-state electron devices
US3024140A (en) * 1960-07-05 1962-03-06 Space Technology Lab Inc Nonlinear electrical arrangement
US3116427A (en) * 1960-07-05 1963-12-31 Gen Electric Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive
US3150282A (en) * 1962-11-13 1964-09-22 Stanford Research Inst High efficiency cathode structure

Also Published As

Publication number Publication date
US3214629A (en) 1965-10-26
DE1281587B (en) 1968-10-31

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