FR2323229A1 - SEMICONDUCTOR MOS - Google Patents

SEMICONDUCTOR MOS

Info

Publication number
FR2323229A1
FR2323229A1 FR7625418A FR7625418A FR2323229A1 FR 2323229 A1 FR2323229 A1 FR 2323229A1 FR 7625418 A FR7625418 A FR 7625418A FR 7625418 A FR7625418 A FR 7625418A FR 2323229 A1 FR2323229 A1 FR 2323229A1
Authority
FR
France
Prior art keywords
semiconductor
insulator
substrate
mos
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7625418A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2323229A1 publication Critical patent/FR2323229A1/en
Withdrawn legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Abstract

AN ELECTROSTATICALLY BONDED SEMICONDUCTOR-ON-INSULATOR MOS DEVICE, AND A METHOD OF MAKING THE SAME An electrostatically bonded semiconductor-on-insulator and particularly semiconductor-on-sapphire MOS devices are made of bulk materials. A semiconductor body of a bulk material of less than about 75 microns in thickness is electrostatically bonded to an insulator substrate of a bulk material. A dielectric layer of between 500 and 2,000 Angstroms in thickness is then formed on the semiconductor body to make a MOS semiconductor device and preferably a MOS field-effect transistor. The semiconductor-on-insulator MOS device is preferably made by first forming a major surface of the dielectric substrate and a major surface of the semiconductor body in planar configurations, applying a metal layer to the opposed major surface of the insulator substrate, and placing the planar surfaces of the body and substrate in intimate contact. The assembly is then heated to at least 300.degree.C. and preferably at least 700.degree.C. while avoiding oxidation of the contacted surfaces, and thereafter applying an electrical potential of at least 700 volts between said metal layer and the semiconductor body to electrostatically bond the insulator substrate to the semiconductor body. The electrostatically bonded assembly is then cooled at a rate less than about 10.degree.C. per minute to a temperature of about 300.degree.C. and preferably to room temperature. Then, a dielectric layer and metal layer are applied on the semiconductor body to complete the semiconductor-on-substrate MOS device.
FR7625418A 1975-09-04 1976-08-20 SEMICONDUCTOR MOS Withdrawn FR2323229A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61036675A 1975-09-04 1975-09-04

Publications (1)

Publication Number Publication Date
FR2323229A1 true FR2323229A1 (en) 1977-04-01

Family

ID=24444734

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7625418A Withdrawn FR2323229A1 (en) 1975-09-04 1976-08-20 SEMICONDUCTOR MOS

Country Status (5)

Country Link
JP (1) JPS5232279A (en)
CA (1) CA1063254A (en)
DE (1) DE2638404A1 (en)
FR (1) FR2323229A1 (en)
GB (1) GB1557787A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0093557A2 (en) * 1982-04-26 1983-11-09 Kabushiki Kaisha Toshiba High-speed complementary semiconductor integrated circuit
WO2000057484A1 (en) * 1999-03-19 2000-09-28 Silicon Wave, Inc. Integrated circuit capacitor in a silicon-on-insulator integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587487A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Driving system for semiconductor device

Citations (2)

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Publication number Priority date Publication date Assignee Title
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Cited By (4)

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EP0093557A2 (en) * 1982-04-26 1983-11-09 Kabushiki Kaisha Toshiba High-speed complementary semiconductor integrated circuit
EP0093557A3 (en) * 1982-04-26 1985-09-11 Kabushiki Kaisha Toshiba High-speed complementary semiconductor integrated circuit
WO2000057484A1 (en) * 1999-03-19 2000-09-28 Silicon Wave, Inc. Integrated circuit capacitor in a silicon-on-insulator integrated circuit
US6627954B1 (en) 1999-03-19 2003-09-30 Silicon Wave, Inc. Integrated circuit capacitor in a silicon-on-insulator integrated circuit

Also Published As

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DE2638404A1 (en) 1977-03-17
CA1063254A (en) 1979-09-25
GB1557787A (en) 1979-12-12
JPS5232279A (en) 1977-03-11

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