JPS5232279A - Electrostatically bonded semiconductor ion insulator mos element and method of producing same - Google Patents

Electrostatically bonded semiconductor ion insulator mos element and method of producing same

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Publication number
JPS5232279A
JPS5232279A JP51105091A JP10509176A JPS5232279A JP S5232279 A JPS5232279 A JP S5232279A JP 51105091 A JP51105091 A JP 51105091A JP 10509176 A JP10509176 A JP 10509176A JP S5232279 A JPS5232279 A JP S5232279A
Authority
JP
Japan
Prior art keywords
semiconductor
insulator
substrate
electrostatically bonded
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51105091A
Other languages
Japanese (ja)
Inventor
Habaato Furankoomu Moorisu
Robaato Zedon Jiyon
Yau Uu Shiyuu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5232279A publication Critical patent/JPS5232279A/en
Pending legal-status Critical Current

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Abstract

AN ELECTROSTATICALLY BONDED SEMICONDUCTOR-ON-INSULATOR MOS DEVICE, AND A METHOD OF MAKING THE SAME An electrostatically bonded semiconductor-on-insulator and particularly semiconductor-on-sapphire MOS devices are made of bulk materials. A semiconductor body of a bulk material of less than about 75 microns in thickness is electrostatically bonded to an insulator substrate of a bulk material. A dielectric layer of between 500 and 2,000 Angstroms in thickness is then formed on the semiconductor body to make a MOS semiconductor device and preferably a MOS field-effect transistor. The semiconductor-on-insulator MOS device is preferably made by first forming a major surface of the dielectric substrate and a major surface of the semiconductor body in planar configurations, applying a metal layer to the opposed major surface of the insulator substrate, and placing the planar surfaces of the body and substrate in intimate contact. The assembly is then heated to at least 300.degree.C. and preferably at least 700.degree.C. while avoiding oxidation of the contacted surfaces, and thereafter applying an electrical potential of at least 700 volts between said metal layer and the semiconductor body to electrostatically bond the insulator substrate to the semiconductor body. The electrostatically bonded assembly is then cooled at a rate less than about 10.degree.C. per minute to a temperature of about 300.degree.C. and preferably to room temperature. Then, a dielectric layer and metal layer are applied on the semiconductor body to complete the semiconductor-on-substrate MOS device.
JP51105091A 1975-09-04 1976-09-03 Electrostatically bonded semiconductor ion insulator mos element and method of producing same Pending JPS5232279A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61036675A 1975-09-04 1975-09-04

Publications (1)

Publication Number Publication Date
JPS5232279A true JPS5232279A (en) 1977-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP51105091A Pending JPS5232279A (en) 1975-09-04 1976-09-03 Electrostatically bonded semiconductor ion insulator mos element and method of producing same

Country Status (5)

Country Link
JP (1) JPS5232279A (en)
CA (1) CA1063254A (en)
DE (1) DE2638404A1 (en)
FR (1) FR2323229A1 (en)
GB (1) GB1557787A (en)

Cited By (1)

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JPS5587487A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Driving system for semiconductor device

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Publication number Priority date Publication date Assignee Title
JPS58186961A (en) * 1982-04-26 1983-11-01 Toshiba Corp Semiconductor device
US6627954B1 (en) 1999-03-19 2003-09-30 Silicon Wave, Inc. Integrated circuit capacitor in a silicon-on-insulator integrated circuit

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GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3783218A (en) * 1972-01-12 1974-01-01 Gen Electric Electrostatic bonding process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587487A (en) * 1978-12-25 1980-07-02 Fujitsu Ltd Driving system for semiconductor device

Also Published As

Publication number Publication date
FR2323229A1 (en) 1977-04-01
DE2638404A1 (en) 1977-03-17
GB1557787A (en) 1979-12-12
CA1063254A (en) 1979-09-25

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