JPS57201048A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57201048A
JPS57201048A JP8546781A JP8546781A JPS57201048A JP S57201048 A JPS57201048 A JP S57201048A JP 8546781 A JP8546781 A JP 8546781A JP 8546781 A JP8546781 A JP 8546781A JP S57201048 A JPS57201048 A JP S57201048A
Authority
JP
Japan
Prior art keywords
substrate
electrode
resistors
voltage
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8546781A
Other languages
Japanese (ja)
Inventor
Shigeru Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8546781A priority Critical patent/JPS57201048A/en
Publication of JPS57201048A publication Critical patent/JPS57201048A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enhance the reliability of a semiconductor device by providing an inversion preventive electrode, and controlling a voltage itself applied to an MOS structure, thereby preventing the production of a parasitic MOS transistor. CONSTITUTION:The highest voltage of semiconductor devices is applied to an n type silicon substrate 11. Two p type diffused resistors 121, 122 are formed vertically to the sectional surface and in parallel with the surface on the surface of the substrate 11. Operating resistors 121, 122 and the substrate 11 are reversely biased, and the resistors 121, 122 are operated in the state to be electrically isolated. The surface of the substrate 11 is covered with an interlayer insulating film 13, and an inversion preventing electrode 14, interlayer insulating film 14 and wire 16 are formed on the surface. The voltage applied to the MOS structure having the substrate 11, the film 13 and the electrode 14 is controlled by the wire 16 and the electrode 14.
JP8546781A 1981-06-03 1981-06-03 Semiconductor device Pending JPS57201048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8546781A JPS57201048A (en) 1981-06-03 1981-06-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8546781A JPS57201048A (en) 1981-06-03 1981-06-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57201048A true JPS57201048A (en) 1982-12-09

Family

ID=13859686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8546781A Pending JPS57201048A (en) 1981-06-03 1981-06-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57201048A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250664A (en) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd Semiconductor integrated circuit
JPH0294455A (en) * 1988-09-29 1990-04-05 Mitsubishi Electric Corp Semiconductor device
JPH03116945A (en) * 1989-09-29 1991-05-17 Mitsubishi Electric Corp Semiconductor storage device
US5521419A (en) * 1989-02-10 1996-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having field shield element isolating structure and method of manufacturing the same
JP2014007185A (en) * 2012-06-21 2014-01-16 Lapis Semiconductor Co Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250664A (en) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd Semiconductor integrated circuit
JPH0294455A (en) * 1988-09-29 1990-04-05 Mitsubishi Electric Corp Semiconductor device
US5521419A (en) * 1989-02-10 1996-05-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having field shield element isolating structure and method of manufacturing the same
JPH03116945A (en) * 1989-09-29 1991-05-17 Mitsubishi Electric Corp Semiconductor storage device
JP2014007185A (en) * 2012-06-21 2014-01-16 Lapis Semiconductor Co Ltd Semiconductor device

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