GB954534A - Electrode contact structures and method of providing the same - Google Patents

Electrode contact structures and method of providing the same

Info

Publication number
GB954534A
GB954534A GB16944/62A GB1694462A GB954534A GB 954534 A GB954534 A GB 954534A GB 16944/62 A GB16944/62 A GB 16944/62A GB 1694462 A GB1694462 A GB 1694462A GB 954534 A GB954534 A GB 954534A
Authority
GB
United Kingdom
Prior art keywords
layer
deposited
electrodes
forming
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16944/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB954534A publication Critical patent/GB954534A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

954,534. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. May 3, 1962 [Dec. 19, 1961], No. 16944/62. Heading H1K. A method of attaching electrodes to a semiconductor body comprises forming on a surface of the body a first metallic layer 18 (Fig. 3) which acts as a first electrode, forming on the latter an insulating layer 19 which overlaps the first layer and forming on layer 19 a second metallic layer 21 which overlaps layer 19 thereby producing a second electrode which is spaced by layer 19 from the first electrode. It is stated that by using this method very accurate and close spacing of the electrodes can be obtained. As described silicon oxide 15 is deposited through a mask on to a 0.2 ohm cm. Ge wafer 12 and Sb is then diffused into the uncoated part of the wafer at a temperature of 580 ‹ C. for 15 hours to form an N-type base zone 13. A silver bar 17 (Fig. 2 and Fig. 1, not shown) is deposited on the oxide layer and Sb-Ag-Au strips 18 connected to bar 17 are deposited on zone 13 to form base electrodes. A silicon oxide layer 19 is then deposited so as to overlap each strip 18 after which A121 is deposited followed by silver 22. The aluminium is alloyed to the base zone (Fig. 3) by heating the device at 450‹ C. for 30 seconds thus forming an emitter region 23. A silicon wafer may also be used. In an alternative arrangement (Fig. 4, not shown) the electrodes and the insulating layer are formed as overlapping rings on a disc of silicon or germanium.
GB16944/62A 1961-12-19 1962-05-03 Electrode contact structures and method of providing the same Expired GB954534A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16059161A 1961-12-19 1961-12-19

Publications (1)

Publication Number Publication Date
GB954534A true GB954534A (en) 1964-04-08

Family

ID=22577517

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16944/62A Expired GB954534A (en) 1961-12-19 1962-05-03 Electrode contact structures and method of providing the same

Country Status (5)

Country Link
BE (1) BE626251A (en)
DE (1) DE1439938A1 (en)
FR (1) FR1339897A (en)
GB (1) GB954534A (en)
NL (1) NL285921A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
US3409807A (en) * 1964-01-08 1968-11-05 Telefunken Patent Semiconductor arrangement with capacitative shielding means between conductive strips and semiconductor body
US3474303A (en) * 1965-09-07 1969-10-21 Semikron G Fur Gleichrichtelba Semiconductor element having separated cathode zones
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
US3312871A (en) * 1964-12-23 1967-04-04 Ibm Interconnection arrangement for integrated circuits
US3651384A (en) * 1971-03-08 1972-03-21 Warren P Waters Planar schottky barrier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409807A (en) * 1964-01-08 1968-11-05 Telefunken Patent Semiconductor arrangement with capacitative shielding means between conductive strips and semiconductor body
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3474303A (en) * 1965-09-07 1969-10-21 Semikron G Fur Gleichrichtelba Semiconductor element having separated cathode zones

Also Published As

Publication number Publication date
FR1339897A (en) 1963-10-11
NL285921A (en)
DE1439938A1 (en) 1968-12-19
BE626251A (en)

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