GB954534A - Electrode contact structures and method of providing the same - Google Patents
Electrode contact structures and method of providing the sameInfo
- Publication number
- GB954534A GB954534A GB16944/62A GB1694462A GB954534A GB 954534 A GB954534 A GB 954534A GB 16944/62 A GB16944/62 A GB 16944/62A GB 1694462 A GB1694462 A GB 1694462A GB 954534 A GB954534 A GB 954534A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- deposited
- electrodes
- forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 229910002696 Ag-Au Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
954,534. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. May 3, 1962 [Dec. 19, 1961], No. 16944/62. Heading H1K. A method of attaching electrodes to a semiconductor body comprises forming on a surface of the body a first metallic layer 18 (Fig. 3) which acts as a first electrode, forming on the latter an insulating layer 19 which overlaps the first layer and forming on layer 19 a second metallic layer 21 which overlaps layer 19 thereby producing a second electrode which is spaced by layer 19 from the first electrode. It is stated that by using this method very accurate and close spacing of the electrodes can be obtained. As described silicon oxide 15 is deposited through a mask on to a 0.2 ohm cm. Ge wafer 12 and Sb is then diffused into the uncoated part of the wafer at a temperature of 580 ‹ C. for 15 hours to form an N-type base zone 13. A silver bar 17 (Fig. 2 and Fig. 1, not shown) is deposited on the oxide layer and Sb-Ag-Au strips 18 connected to bar 17 are deposited on zone 13 to form base electrodes. A silicon oxide layer 19 is then deposited so as to overlap each strip 18 after which A121 is deposited followed by silver 22. The aluminium is alloyed to the base zone (Fig. 3) by heating the device at 450‹ C. for 30 seconds thus forming an emitter region 23. A silicon wafer may also be used. In an alternative arrangement (Fig. 4, not shown) the electrodes and the insulating layer are formed as overlapping rings on a disc of silicon or germanium.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16059161A | 1961-12-19 | 1961-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB954534A true GB954534A (en) | 1964-04-08 |
Family
ID=22577517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16944/62A Expired GB954534A (en) | 1961-12-19 | 1962-05-03 | Electrode contact structures and method of providing the same |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE626251A (en) |
| DE (1) | DE1439938A1 (en) |
| FR (1) | FR1339897A (en) |
| GB (1) | GB954534A (en) |
| NL (1) | NL285921A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3405329A (en) * | 1964-04-16 | 1968-10-08 | Northern Electric Co | Semiconductor devices |
| US3409807A (en) * | 1964-01-08 | 1968-11-05 | Telefunken Patent | Semiconductor arrangement with capacitative shielding means between conductive strips and semiconductor body |
| US3474303A (en) * | 1965-09-07 | 1969-10-21 | Semikron G Fur Gleichrichtelba | Semiconductor element having separated cathode zones |
| US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
| US3312871A (en) * | 1964-12-23 | 1967-04-04 | Ibm | Interconnection arrangement for integrated circuits |
| US3651384A (en) * | 1971-03-08 | 1972-03-21 | Warren P Waters | Planar schottky barrier |
-
0
- BE BE626251D patent/BE626251A/xx unknown
- NL NL285921D patent/NL285921A/xx unknown
-
1962
- 1962-05-03 GB GB16944/62A patent/GB954534A/en not_active Expired
- 1962-11-21 FR FR916187A patent/FR1339897A/en not_active Expired
- 1962-12-13 DE DE19621439938 patent/DE1439938A1/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3409807A (en) * | 1964-01-08 | 1968-11-05 | Telefunken Patent | Semiconductor arrangement with capacitative shielding means between conductive strips and semiconductor body |
| US3405329A (en) * | 1964-04-16 | 1968-10-08 | Northern Electric Co | Semiconductor devices |
| US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
| US3474303A (en) * | 1965-09-07 | 1969-10-21 | Semikron G Fur Gleichrichtelba | Semiconductor element having separated cathode zones |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1339897A (en) | 1963-10-11 |
| DE1439938A1 (en) | 1968-12-19 |
| BE626251A (en) | |
| NL285921A (en) |
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