JPS6449274A - Superhigh-speed semiconductor device - Google Patents

Superhigh-speed semiconductor device

Info

Publication number
JPS6449274A
JPS6449274A JP20513287A JP20513287A JPS6449274A JP S6449274 A JPS6449274 A JP S6449274A JP 20513287 A JP20513287 A JP 20513287A JP 20513287 A JP20513287 A JP 20513287A JP S6449274 A JPS6449274 A JP S6449274A
Authority
JP
Japan
Prior art keywords
layer
center
superhigh
carrier supply
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20513287A
Other languages
Japanese (ja)
Inventor
Naoki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20513287A priority Critical patent/JPS6449274A/en
Publication of JPS6449274A publication Critical patent/JPS6449274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To solve a problem of a DX center in a superhigh-speed semiconductor device by a method wherein an impurity which is situated under an active layer and whose impurity concentration and y-value are at a level not generating the DX center is dopoed into a carrier supply layer. CONSTITUTION:An impurity-doped AlyGa1-yAs gate insulating layer 12 which has been formed on the side of a substrate of an undoped and distorted InxGa1-xAs active layer 13 is provided; the impurity concentration and a y-value in a carrier supply layer 14 are selected in such a way that a DX center is not generated. By adopting this means, the DX center is not generated in the carrier supply layer 14 formed under the active layer 13; a Schottky barrier by the gate insulating layer 12 formed on the layer and a gate electrode 11 can be maintained to be sufficiently high.
JP20513287A 1987-08-20 1987-08-20 Superhigh-speed semiconductor device Pending JPS6449274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20513287A JPS6449274A (en) 1987-08-20 1987-08-20 Superhigh-speed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20513287A JPS6449274A (en) 1987-08-20 1987-08-20 Superhigh-speed semiconductor device

Publications (1)

Publication Number Publication Date
JPS6449274A true JPS6449274A (en) 1989-02-23

Family

ID=16501963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20513287A Pending JPS6449274A (en) 1987-08-20 1987-08-20 Superhigh-speed semiconductor device

Country Status (1)

Country Link
JP (1) JPS6449274A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179510A (en) * 1983-03-29 1984-10-12 Toa Nenryo Kogyo Kk Preparation of ethylene copolymer
JPH0645366A (en) * 1991-03-26 1994-02-18 Mitsubishi Electric Corp Field effect transistor
US5521404A (en) * 1992-11-30 1996-05-28 Fujitsu Limited Group III-V interdiffusion prevented hetero-junction semiconductor device
WO2007083631A1 (en) 2006-01-17 2007-07-26 Mitsubishi Gas Chemical Company, Inc. Method of stabilizing s-adenosyl-l-methionine and stabilized composition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59179510A (en) * 1983-03-29 1984-10-12 Toa Nenryo Kogyo Kk Preparation of ethylene copolymer
JPH0645366A (en) * 1991-03-26 1994-02-18 Mitsubishi Electric Corp Field effect transistor
US5521404A (en) * 1992-11-30 1996-05-28 Fujitsu Limited Group III-V interdiffusion prevented hetero-junction semiconductor device
WO2007083631A1 (en) 2006-01-17 2007-07-26 Mitsubishi Gas Chemical Company, Inc. Method of stabilizing s-adenosyl-l-methionine and stabilized composition
US8148348B2 (en) 2006-01-17 2012-04-03 Mitsubishi Gas Chemical Company, Inc. Method of stabilizing S-adenosyl-L-methionine and stabilized composition

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