JPS6450468A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6450468A
JPS6450468A JP20680387A JP20680387A JPS6450468A JP S6450468 A JPS6450468 A JP S6450468A JP 20680387 A JP20680387 A JP 20680387A JP 20680387 A JP20680387 A JP 20680387A JP S6450468 A JPS6450468 A JP S6450468A
Authority
JP
Japan
Prior art keywords
flattened
polycrystalline semiconductor
employed
insulating film
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20680387A
Other languages
Japanese (ja)
Inventor
Hidemasa Mizutani
Shigeki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP20680387A priority Critical patent/JPS6450468A/en
Publication of JPS6450468A publication Critical patent/JPS6450468A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To improve the performance of a semiconductor device, by flattening an uneven part generated when crystalline semiconductor layers are formed on a substrate, providing a gate insulating film and a gate electrode on the surface, and employing the vicinity of the flattened surface as a channel. CONSTITUTION:The uneven part of a polycrystalline semiconductor layer formed when a polycrystalline semiconductor layer having 0.5mum of more of crystalline grain size is formed on a substrate is flattened to 100Angstrom or less, a gate insulating film and a gate electrode are formed on the flattened surface, and the flattened surface is employed as the channel of a field-effect transistor. Thus, the polycrystalline semiconductor which is regarded as being inferior in performance is employed to easily obtain inexpensively a field-effect transistor having excellent characteristics.
JP20680387A 1987-08-20 1987-08-20 Semiconductor device Pending JPS6450468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20680387A JPS6450468A (en) 1987-08-20 1987-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20680387A JPS6450468A (en) 1987-08-20 1987-08-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450468A true JPS6450468A (en) 1989-02-27

Family

ID=16529352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20680387A Pending JPS6450468A (en) 1987-08-20 1987-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061655A (en) * 1990-02-16 1991-10-29 Mitsubishi Denki Kabushiki Kaisha Method of producing SOI structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061655A (en) * 1990-02-16 1991-10-29 Mitsubishi Denki Kabushiki Kaisha Method of producing SOI structures

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