JPS57211783A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS57211783A
JPS57211783A JP9669581A JP9669581A JPS57211783A JP S57211783 A JPS57211783 A JP S57211783A JP 9669581 A JP9669581 A JP 9669581A JP 9669581 A JP9669581 A JP 9669581A JP S57211783 A JPS57211783 A JP S57211783A
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
active layer
semiconductor device
pinch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9669581A
Other languages
Japanese (ja)
Inventor
Yasunari Umemoto
Susumu Takahashi
Nobutoshi Matsunaga
Michiharu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9669581A priority Critical patent/JPS57211783A/en
Publication of JPS57211783A publication Critical patent/JPS57211783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce a variation in pinch off voltage and to cut an excessive prolongation in the tailing characteristics of ID-VG by forming a layer doped in P type between a semiinsulating substrate and an active layer on the whole surface of a wafer. CONSTITUTION:In a field effect transistor using a compound semiconductor, a semiconductor layer 10 having a conductivity type opposite to that of an active layer is provided between the said semiinsulating substrate crystal 1 and the active layer 3 and electrodes 4, 5 controlling the layer 10 is provided. This can reduce a variation in pinch off voltage.
JP9669581A 1981-06-24 1981-06-24 Compound semiconductor device Pending JPS57211783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9669581A JPS57211783A (en) 1981-06-24 1981-06-24 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9669581A JPS57211783A (en) 1981-06-24 1981-06-24 Compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS57211783A true JPS57211783A (en) 1982-12-25

Family

ID=14171901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9669581A Pending JPS57211783A (en) 1981-06-24 1981-06-24 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57211783A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308389A (en) * 1987-06-10 1988-12-15 Toshiba Corp Semiconductor device
US5132752A (en) * 1985-05-22 1992-07-21 Hitachi, Ltd. Field effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230178A (en) * 1975-09-03 1977-03-07 Hitachi Ltd Semiconductor unit
JPS538572A (en) * 1976-07-12 1978-01-26 Sony Corp Field effect type transistor
JPS5565427A (en) * 1978-11-10 1980-05-16 Fujitsu Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230178A (en) * 1975-09-03 1977-03-07 Hitachi Ltd Semiconductor unit
JPS538572A (en) * 1976-07-12 1978-01-26 Sony Corp Field effect type transistor
JPS5565427A (en) * 1978-11-10 1980-05-16 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132752A (en) * 1985-05-22 1992-07-21 Hitachi, Ltd. Field effect transistor
JPS63308389A (en) * 1987-06-10 1988-12-15 Toshiba Corp Semiconductor device

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