JPS5623780A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS5623780A
JPS5623780A JP9837079A JP9837079A JPS5623780A JP S5623780 A JPS5623780 A JP S5623780A JP 9837079 A JP9837079 A JP 9837079A JP 9837079 A JP9837079 A JP 9837079A JP S5623780 A JPS5623780 A JP S5623780A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
width
consisted
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9837079A
Other languages
Japanese (ja)
Other versions
JPS6146068B2 (en
Inventor
Yutaka Takato
Hirosaku Nonomura
Sadatoshi Takechi
Hisashi Kamiide
Tomio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9837079A priority Critical patent/JPS5623780A/en
Priority to DE3028718A priority patent/DE3028718C2/en
Priority to US06/173,818 priority patent/US4404578A/en
Priority to GB8025044A priority patent/GB2056770B/en
Publication of JPS5623780A publication Critical patent/JPS5623780A/en
Priority to GB08316195A priority patent/GB2127216B/en
Priority to GB08316196A priority patent/GB2126779B/en
Publication of JPS6146068B2 publication Critical patent/JPS6146068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain the thin film transistor having a suprior characteristic by a method wherein the width of the parts of semiconductor layers coming in contact with source and drain electrodes are made to be broader than the width of a semiconductor channel part, and the contact areas and made to be large to reduce the parasitic resistances generated at the electrodes. CONSTITUTION:A control gate electrode 2 consisted of Al, etc., is formed on a glass insulator substrate 1, and the exposed surface is covered with an insulating layer 3 like Al2O3, etc. A source electrode 5 and a drain electrode 6 consisted of the same material respectively are formed at the outside of the insulating layer 3 being located at the both sides of the electrode 2, and a semiconductor layer 4 consisted of CdSe, etc., is adhered on the electrodes 5, 6 being laid over the film 3. In the transistor constituted by this way, gaps 7 unable to be controlled by the electrode 2 is made between the electrode 2 and the electrodes 5, 6 to generate parasitic resistances in series. Therefore the channel region of the layer 4 is made to be narrow width w and is made to be broad width W at the both end parts. If necessary, regions 8, 9 being added with a very small quantity of In are provided on the electrodes 5, 6.
JP9837079A 1979-07-31 1979-07-31 Manufacture of thin film transistor Granted JPS5623780A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9837079A JPS5623780A (en) 1979-07-31 1979-07-31 Manufacture of thin film transistor
DE3028718A DE3028718C2 (en) 1979-07-31 1980-07-29 Thin film transistor in connection with a display device
US06/173,818 US4404578A (en) 1979-07-31 1980-07-30 Structure of thin film transistors
GB8025044A GB2056770B (en) 1979-07-31 1980-07-31 Thin film transistors
GB08316195A GB2127216B (en) 1979-07-31 1983-06-14 Improved s of thin film transistors and manufacture method thereof
GB08316196A GB2126779B (en) 1979-07-31 1983-06-14 Thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9837079A JPS5623780A (en) 1979-07-31 1979-07-31 Manufacture of thin film transistor

Publications (2)

Publication Number Publication Date
JPS5623780A true JPS5623780A (en) 1981-03-06
JPS6146068B2 JPS6146068B2 (en) 1986-10-11

Family

ID=14217985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9837079A Granted JPS5623780A (en) 1979-07-31 1979-07-31 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS5623780A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (en) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd Insulating gate type field-effect semiconductor device
JPS58134476A (en) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp Thin film transistor
JPS58190063A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Thin film transistor for transmission type liquid crystal display panel
JPS61161764A (en) * 1985-01-11 1986-07-22 Nec Corp Manufacture of thin film transistor
JPS6298884U (en) * 1985-12-12 1987-06-24
JPS6298883U (en) * 1985-12-12 1987-06-24
JPH039190A (en) * 1989-06-07 1991-01-17 Kawasaki Steel Corp Laminated spiral pipe
JPH0659716B2 (en) * 1985-06-11 1994-08-10 アンステイテイ フランセ−ズ ド ペトロ−ル A conduit that can be used for transporting fluids and can suppress the exudation of transported fluids
WO2019187070A1 (en) * 2018-03-30 2019-10-03 シャープ株式会社 Transistor and display device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (en) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd Insulating gate type field-effect semiconductor device
JPH0574221B2 (en) * 1981-10-16 1993-10-18 Handotai Energy Kenkyusho
JPS58134476A (en) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp Thin film transistor
JPS58190063A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Thin film transistor for transmission type liquid crystal display panel
JPS61161764A (en) * 1985-01-11 1986-07-22 Nec Corp Manufacture of thin film transistor
JPH0659716B2 (en) * 1985-06-11 1994-08-10 アンステイテイ フランセ−ズ ド ペトロ−ル A conduit that can be used for transporting fluids and can suppress the exudation of transported fluids
JPS6298884U (en) * 1985-12-12 1987-06-24
JPS6298883U (en) * 1985-12-12 1987-06-24
JPH0537117Y2 (en) * 1985-12-12 1993-09-20
JPH039190A (en) * 1989-06-07 1991-01-17 Kawasaki Steel Corp Laminated spiral pipe
WO2019187070A1 (en) * 2018-03-30 2019-10-03 シャープ株式会社 Transistor and display device

Also Published As

Publication number Publication date
JPS6146068B2 (en) 1986-10-11

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