JPS5752167A - Insulated gate type field effect transistor and manufacture thereof - Google Patents

Insulated gate type field effect transistor and manufacture thereof

Info

Publication number
JPS5752167A
JPS5752167A JP12819480A JP12819480A JPS5752167A JP S5752167 A JPS5752167 A JP S5752167A JP 12819480 A JP12819480 A JP 12819480A JP 12819480 A JP12819480 A JP 12819480A JP S5752167 A JPS5752167 A JP S5752167A
Authority
JP
Japan
Prior art keywords
layer
single crystalline
ions
manufacture
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12819480A
Other languages
Japanese (ja)
Inventor
Yasuhisa Omura
Eiichi Sano
Kuniki Owada
Akira Ariyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12819480A priority Critical patent/JPS5752167A/en
Publication of JPS5752167A publication Critical patent/JPS5752167A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the short channel effect by injecting O or N ions into a single crystalline Si substrate to form an insulating layer in the interior and forming an IGFET in the single crystalline layer on the surface, thereby eliminating the influence based on the crystalline defect. CONSTITUTION:O or N ions are injected in a single crystalline Si substrate 1 to form an insulating layer 21 made of oxidized film or nitrided film therein, the surface semiconductor layer is mesa etched to form a thermally oxidized film 5 on the surface, with the gate electrode 6 as a mask impurity ions are injected to form source and drain regions 2, 4, and source and drain electrodes 9, 10 are formed. In this manner, the influence of the cyrstalline defect can be reduced as compared with a conventional SOS, and the thickness of the layer can be reduced. Accordigly, it can prevent the short channel effect or can reduce it to the ignorable extent.
JP12819480A 1980-09-16 1980-09-16 Insulated gate type field effect transistor and manufacture thereof Pending JPS5752167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12819480A JPS5752167A (en) 1980-09-16 1980-09-16 Insulated gate type field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12819480A JPS5752167A (en) 1980-09-16 1980-09-16 Insulated gate type field effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5752167A true JPS5752167A (en) 1982-03-27

Family

ID=14978773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12819480A Pending JPS5752167A (en) 1980-09-16 1980-09-16 Insulated gate type field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5752167A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124971A (en) * 1983-12-10 1985-07-04 Matsushita Electronics Corp Fet
JPH0645609A (en) * 1991-01-14 1994-02-18 Nippon Telegr & Teleph Corp <Ntt> Field-effect semiconductor device and its manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429582A (en) * 1977-08-10 1979-03-05 Agency Of Ind Science & Technol Mos semiconductor device
JPS5474682A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429582A (en) * 1977-08-10 1979-03-05 Agency Of Ind Science & Technol Mos semiconductor device
JPS5474682A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124971A (en) * 1983-12-10 1985-07-04 Matsushita Electronics Corp Fet
JPH0645609A (en) * 1991-01-14 1994-02-18 Nippon Telegr & Teleph Corp <Ntt> Field-effect semiconductor device and its manufacture

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