JPS5565427A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5565427A
JPS5565427A JP13872378A JP13872378A JPS5565427A JP S5565427 A JPS5565427 A JP S5565427A JP 13872378 A JP13872378 A JP 13872378A JP 13872378 A JP13872378 A JP 13872378A JP S5565427 A JPS5565427 A JP S5565427A
Authority
JP
Japan
Prior art keywords
layer
type layer
epitaxial
growth
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13872378A
Other languages
Japanese (ja)
Inventor
Kenya Nakai
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13872378A priority Critical patent/JPS5565427A/en
Publication of JPS5565427A publication Critical patent/JPS5565427A/en
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase yield rate during the growth of the epitaxial layer and prevent the reduction of characteristics as a high-frequency element by making it possible to use the epitaxial growing crystal layer which has comparatively higher positive hole density as a buffer layer.
CONSTITUTION: 2 Layers of a p-type layer 2A and a n--type layer 2B which constitute a buffer layer 2 are formed on a half insulating substrate 1 composed of mainly GaAs, and the value of the positive hole density for the p-type layer 2A is set lower than the fixed one so that the comparatively easy doping condition may be obtained. After setting the value of the electron density of the n--type layer 2B lower than the fixed one, the p-type layer 2A and n--type layer 2B are successively formed according to the gaseous phase epitaxial growing method. Next after forming the n--layer 2B, the growth of the epitaxial is further continued by supplying a dopant such as Sn, Te, S, Se, etc. so as to form an active layer 3 on the n--type layer 2B. Thus the yield rate in the growth of the epitaxial layer is increase, and the characteristics of a semiconductor device is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP13872378A 1978-11-10 1978-11-10 Semiconductor device Pending JPS5565427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13872378A JPS5565427A (en) 1978-11-10 1978-11-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13872378A JPS5565427A (en) 1978-11-10 1978-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5565427A true JPS5565427A (en) 1980-05-16

Family

ID=15228633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13872378A Pending JPS5565427A (en) 1978-11-10 1978-11-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5565427A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211783A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Compound semiconductor device
JPS6037783A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPH01184874A (en) * 1988-01-13 1989-07-24 Nec Corp Compound semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211783A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Compound semiconductor device
JPS6037783A (en) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd Field effect transistor
JPH01184874A (en) * 1988-01-13 1989-07-24 Nec Corp Compound semiconductor integrated circuit

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