JPS51140474A - Method of fabricating semiconductor crystal - Google Patents

Method of fabricating semiconductor crystal

Info

Publication number
JPS51140474A
JPS51140474A JP6423075A JP6423075A JPS51140474A JP S51140474 A JPS51140474 A JP S51140474A JP 6423075 A JP6423075 A JP 6423075A JP 6423075 A JP6423075 A JP 6423075A JP S51140474 A JPS51140474 A JP S51140474A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
fabricating semiconductor
supphire
misfit
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6423075A
Other languages
Japanese (ja)
Inventor
Masahiro Kitada
Tatsumi Mizutani
Hideo Komatsu
Mitsuru Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6423075A priority Critical patent/JPS51140474A/en
Publication of JPS51140474A publication Critical patent/JPS51140474A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To reduce a dislocation generated in Si crystal due to misfit by irradiating ion to supphire substrate before Si si grown in an expitaxial growth.
COPYRIGHT: (C)1976,JPO&Japio
JP6423075A 1975-05-30 1975-05-30 Method of fabricating semiconductor crystal Pending JPS51140474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6423075A JPS51140474A (en) 1975-05-30 1975-05-30 Method of fabricating semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6423075A JPS51140474A (en) 1975-05-30 1975-05-30 Method of fabricating semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS51140474A true JPS51140474A (en) 1976-12-03

Family

ID=13252093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6423075A Pending JPS51140474A (en) 1975-05-30 1975-05-30 Method of fabricating semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS51140474A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544580A (en) * 1977-06-13 1979-01-13 Matsushita Electric Ind Co Ltd Production of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544580A (en) * 1977-06-13 1979-01-13 Matsushita Electric Ind Co Ltd Production of semiconductor devices

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