JPS54107276A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54107276A
JPS54107276A JP1337278A JP1337278A JPS54107276A JP S54107276 A JPS54107276 A JP S54107276A JP 1337278 A JP1337278 A JP 1337278A JP 1337278 A JP1337278 A JP 1337278A JP S54107276 A JPS54107276 A JP S54107276A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
production
junction
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1337278A
Other languages
Japanese (ja)
Inventor
Takashi Kanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1337278A priority Critical patent/JPS54107276A/en
Publication of JPS54107276A publication Critical patent/JPS54107276A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a semiconductor device where a varactor diode and a PIN diode are stable and the junction having a density distribution is steps can be formed.
CONSTITUTION: A P+ layer is formed on a N-type epitaxial wafer by epitaxial growth, and next, a P++ layer is formed from the P+ layer surface by thermal diffusion, or a N+ layer is formed on the P-type epitaxial wafer by epitaxial growth. Next, N++ layer is formed from the N+ layer surface by heat diffusion, thereby forming PN junction.
COPYRIGHT: (C)1979,JPO&Japio
JP1337278A 1978-02-10 1978-02-10 Production of semiconductor device Pending JPS54107276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1337278A JPS54107276A (en) 1978-02-10 1978-02-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1337278A JPS54107276A (en) 1978-02-10 1978-02-10 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54107276A true JPS54107276A (en) 1979-08-22

Family

ID=11831248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1337278A Pending JPS54107276A (en) 1978-02-10 1978-02-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54107276A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206486A (en) * 1992-01-13 1993-08-13 Nec Corp Manufacture of gaas varactor diode
JP2005064166A (en) * 2003-08-11 2005-03-10 Sony Corp Diode element, semiconductor device equipped therewith, and method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206486A (en) * 1992-01-13 1993-08-13 Nec Corp Manufacture of gaas varactor diode
JP2005064166A (en) * 2003-08-11 2005-03-10 Sony Corp Diode element, semiconductor device equipped therewith, and method of manufacturing semiconductor device

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