JPS54107276A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54107276A JPS54107276A JP1337278A JP1337278A JPS54107276A JP S54107276 A JPS54107276 A JP S54107276A JP 1337278 A JP1337278 A JP 1337278A JP 1337278 A JP1337278 A JP 1337278A JP S54107276 A JPS54107276 A JP S54107276A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- production
- junction
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a semiconductor device where a varactor diode and a PIN diode are stable and the junction having a density distribution is steps can be formed.
CONSTITUTION: A P+ layer is formed on a N-type epitaxial wafer by epitaxial growth, and next, a P++ layer is formed from the P+ layer surface by thermal diffusion, or a N+ layer is formed on the P-type epitaxial wafer by epitaxial growth. Next, N++ layer is formed from the N+ layer surface by heat diffusion, thereby forming PN junction.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1337278A JPS54107276A (en) | 1978-02-10 | 1978-02-10 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1337278A JPS54107276A (en) | 1978-02-10 | 1978-02-10 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54107276A true JPS54107276A (en) | 1979-08-22 |
Family
ID=11831248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1337278A Pending JPS54107276A (en) | 1978-02-10 | 1978-02-10 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107276A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206486A (en) * | 1992-01-13 | 1993-08-13 | Nec Corp | Manufacture of gaas varactor diode |
JP2005064166A (en) * | 2003-08-11 | 2005-03-10 | Sony Corp | Diode element, semiconductor device equipped therewith, and method of manufacturing semiconductor device |
-
1978
- 1978-02-10 JP JP1337278A patent/JPS54107276A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05206486A (en) * | 1992-01-13 | 1993-08-13 | Nec Corp | Manufacture of gaas varactor diode |
JP2005064166A (en) * | 2003-08-11 | 2005-03-10 | Sony Corp | Diode element, semiconductor device equipped therewith, and method of manufacturing semiconductor device |
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