JPS5491079A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5491079A JPS5491079A JP15800677A JP15800677A JPS5491079A JP S5491079 A JPS5491079 A JP S5491079A JP 15800677 A JP15800677 A JP 15800677A JP 15800677 A JP15800677 A JP 15800677A JP S5491079 A JPS5491079 A JP S5491079A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffusion
- film
- layers
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To increase a degree of integration with lateral expansion reduced by making a diffusion coefficient large, by injecting ions partially under adequate conditions.
CONSTITUTION: In oxidized film 4 on P-type Si substrate 1, openings are made and N-type layer 2 and P-type layer 3 are buried. Then, openings is made in film 4 and ions such as Ar are injected to an adequate amount to the film except over layers 3 and 2, thereby partially producing distortional layers 5 and 6 on the surface part. Next, entire film 4 is removed and vapor-phase epitaxial growth of Si is carried out under proper condition of approximate 1200°C, so that layers 9 and 10 of good crystalloid can be obtained. At the same time, layer 7 of a large diffusion coefficient and layer 8 with gettering effect can be formed at once. In this way, diffusion is attained with small lateral expansion and the degree of integration increases. In addition, since the diffusion temperature can be lowered and the diffusion time can also be shortened, the redistribution of impurities can be made small and the yield improves. Further, the gettering layer can be arranged closely and the effect against contamination works.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15800677A JPS5491079A (en) | 1977-12-28 | 1977-12-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15800677A JPS5491079A (en) | 1977-12-28 | 1977-12-28 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5491079A true JPS5491079A (en) | 1979-07-19 |
| JPS6129537B2 JPS6129537B2 (en) | 1986-07-07 |
Family
ID=15662186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15800677A Granted JPS5491079A (en) | 1977-12-28 | 1977-12-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491079A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180145A (en) * | 1981-04-30 | 1982-11-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor integrated circuit device |
| JPH09232324A (en) * | 1996-02-23 | 1997-09-05 | Nec Corp | Semiconductor substrate and its manufacture |
-
1977
- 1977-12-28 JP JP15800677A patent/JPS5491079A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180145A (en) * | 1981-04-30 | 1982-11-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor integrated circuit device |
| JPH09232324A (en) * | 1996-02-23 | 1997-09-05 | Nec Corp | Semiconductor substrate and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129537B2 (en) | 1986-07-07 |
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