JPS5534455A - Integrated circuit of semiconductor - Google Patents

Integrated circuit of semiconductor

Info

Publication number
JPS5534455A
JPS5534455A JP10704678A JP10704678A JPS5534455A JP S5534455 A JPS5534455 A JP S5534455A JP 10704678 A JP10704678 A JP 10704678A JP 10704678 A JP10704678 A JP 10704678A JP S5534455 A JPS5534455 A JP S5534455A
Authority
JP
Japan
Prior art keywords
epitaxial layer
region
dents
transistors
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10704678A
Other languages
Japanese (ja)
Inventor
Yuji Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10704678A priority Critical patent/JPS5534455A/en
Publication of JPS5534455A publication Critical patent/JPS5534455A/en
Pending legal-status Critical Current

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  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a greatly pressure-tight integrated circuit with excellent performances by forming an even earth conductive epitaxial layer on a minus conductive semiconductor substrate with some dents and setting a minus conductive isobation region so that the dents may be encircled.
CONSTITUTION: Grooves with trapezoidal sections are formed by taper-etching a p- type silicon substrate 1. N+ flush layers 2, 3 rich in impurities are formed and an N-type epitaxial layer 11 is shaped. The surface is smoothed by mirror-finishing. Then p+ isolation diffusion regions are formed. The N-type epitaxial region is divided by the above-mentioned processes into four islond regions transistors are composed of. Such thickness of the epitaxial layer enables the transistors to be grately pressure-tight, a shallow insolation region prevents lateral diffusion and the integration rate can be greatly improved.
COPYRIGHT: (C)1980,JPO&Japio
JP10704678A 1978-08-31 1978-08-31 Integrated circuit of semiconductor Pending JPS5534455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10704678A JPS5534455A (en) 1978-08-31 1978-08-31 Integrated circuit of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10704678A JPS5534455A (en) 1978-08-31 1978-08-31 Integrated circuit of semiconductor

Publications (1)

Publication Number Publication Date
JPS5534455A true JPS5534455A (en) 1980-03-11

Family

ID=14449139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10704678A Pending JPS5534455A (en) 1978-08-31 1978-08-31 Integrated circuit of semiconductor

Country Status (1)

Country Link
JP (1) JPS5534455A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929984A (en) * 1972-07-19 1974-03-16
JPS5246183A (en) * 1975-10-09 1977-04-12 Masumi Shirasaki Automatic dyeing and pree twisting apparatus
JPS5269587A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Device and manufacture for high voltage resisting semiconductor
JPS52124874A (en) * 1976-04-14 1977-10-20 Hitachi Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929984A (en) * 1972-07-19 1974-03-16
JPS5246183A (en) * 1975-10-09 1977-04-12 Masumi Shirasaki Automatic dyeing and pree twisting apparatus
JPS5269587A (en) * 1975-12-08 1977-06-09 Hitachi Ltd Device and manufacture for high voltage resisting semiconductor
JPS52124874A (en) * 1976-04-14 1977-10-20 Hitachi Ltd Semiconductor device

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