JPS5463672A - Vapour-phase growth method for iii-v group compound semi conductor - Google Patents

Vapour-phase growth method for iii-v group compound semi conductor

Info

Publication number
JPS5463672A
JPS5463672A JP12992677A JP12992677A JPS5463672A JP S5463672 A JPS5463672 A JP S5463672A JP 12992677 A JP12992677 A JP 12992677A JP 12992677 A JP12992677 A JP 12992677A JP S5463672 A JPS5463672 A JP S5463672A
Authority
JP
Japan
Prior art keywords
grown
carrier density
group compound
grown layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12992677A
Other languages
Japanese (ja)
Inventor
Masaji Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12992677A priority Critical patent/JPS5463672A/en
Publication of JPS5463672A publication Critical patent/JPS5463672A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To control the carrier density of an epitaxially grown layer by annealing the group semiconductor, which is grown in a vapour phase on the substrate, in a prescribed atmosphere to form a thin transformed layer.
CONSTITUTION: A grown layer formed on the substrate is annealed in H2 or inactive gas to grow group compound on the surface. Since a n-type group compound semiconductor has a high carrier density near the surface by annealing and the n-type group compund semiconductor is grown on this surface, a grown layer which has a locally high distribution of carrier density can be obtained. Otherwise, the grown layer is brought into contact with gas including O2 before annealing. When the grown layer is annealed in H2 or active gas in the state where O2 exists on the surface, carrier density is lowered near the surface; and when the n-type group compound semiconductor is grown on this surface, a grown layer which has a locally low carrier density in the depth direction can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP12992677A 1977-10-28 1977-10-28 Vapour-phase growth method for iii-v group compound semi conductor Pending JPS5463672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12992677A JPS5463672A (en) 1977-10-28 1977-10-28 Vapour-phase growth method for iii-v group compound semi conductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12992677A JPS5463672A (en) 1977-10-28 1977-10-28 Vapour-phase growth method for iii-v group compound semi conductor

Publications (1)

Publication Number Publication Date
JPS5463672A true JPS5463672A (en) 1979-05-22

Family

ID=15021821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12992677A Pending JPS5463672A (en) 1977-10-28 1977-10-28 Vapour-phase growth method for iii-v group compound semi conductor

Country Status (1)

Country Link
JP (1) JPS5463672A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451552A (en) * 1994-05-13 1995-09-19 Hughes Aircraft Company Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451552A (en) * 1994-05-13 1995-09-19 Hughes Aircraft Company Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices

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