JPS5463672A - Vapour-phase growth method for iii-v group compound semi conductor - Google Patents
Vapour-phase growth method for iii-v group compound semi conductorInfo
- Publication number
- JPS5463672A JPS5463672A JP12992677A JP12992677A JPS5463672A JP S5463672 A JPS5463672 A JP S5463672A JP 12992677 A JP12992677 A JP 12992677A JP 12992677 A JP12992677 A JP 12992677A JP S5463672 A JPS5463672 A JP S5463672A
- Authority
- JP
- Japan
- Prior art keywords
- grown
- carrier density
- group compound
- grown layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To control the carrier density of an epitaxially grown layer by annealing the group semiconductor, which is grown in a vapour phase on the substrate, in a prescribed atmosphere to form a thin transformed layer.
CONSTITUTION: A grown layer formed on the substrate is annealed in H2 or inactive gas to grow group compound on the surface. Since a n-type group compound semiconductor has a high carrier density near the surface by annealing and the n-type group compund semiconductor is grown on this surface, a grown layer which has a locally high distribution of carrier density can be obtained. Otherwise, the grown layer is brought into contact with gas including O2 before annealing. When the grown layer is annealed in H2 or active gas in the state where O2 exists on the surface, carrier density is lowered near the surface; and when the n-type group compound semiconductor is grown on this surface, a grown layer which has a locally low carrier density in the depth direction can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12992677A JPS5463672A (en) | 1977-10-28 | 1977-10-28 | Vapour-phase growth method for iii-v group compound semi conductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12992677A JPS5463672A (en) | 1977-10-28 | 1977-10-28 | Vapour-phase growth method for iii-v group compound semi conductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5463672A true JPS5463672A (en) | 1979-05-22 |
Family
ID=15021821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12992677A Pending JPS5463672A (en) | 1977-10-28 | 1977-10-28 | Vapour-phase growth method for iii-v group compound semi conductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5463672A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451552A (en) * | 1994-05-13 | 1995-09-19 | Hughes Aircraft Company | Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices |
-
1977
- 1977-10-28 JP JP12992677A patent/JPS5463672A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5451552A (en) * | 1994-05-13 | 1995-09-19 | Hughes Aircraft Company | Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices |
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