JPS5235585A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS5235585A JPS5235585A JP10172876A JP10172876A JPS5235585A JP S5235585 A JPS5235585 A JP S5235585A JP 10172876 A JP10172876 A JP 10172876A JP 10172876 A JP10172876 A JP 10172876A JP S5235585 A JPS5235585 A JP S5235585A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- transistor
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60913975A | 1975-08-29 | 1975-08-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5235585A true JPS5235585A (en) | 1977-03-18 |
Family
ID=24439511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10172876A Pending JPS5235585A (en) | 1975-08-29 | 1976-08-27 | Thin film transistor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5235585A (en) |
DE (1) | DE2637481A1 (en) |
FR (1) | FR2322461A1 (en) |
NL (1) | NL7608958A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688354A (en) * | 1979-12-20 | 1981-07-17 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5788945U (en) * | 1980-11-20 | 1982-06-01 | ||
JPS5788944U (en) * | 1980-11-20 | 1982-06-01 | ||
JPS5788943U (en) * | 1980-11-20 | 1982-06-01 | ||
JPS5790977A (en) * | 1980-11-27 | 1982-06-05 | Seiko Epson Corp | Double-layer gate polysilicon mos transistor |
JPS5828780A (en) * | 1981-08-12 | 1983-02-19 | 富士通株式会社 | Display |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
GB1161647A (en) * | 1967-08-04 | 1969-08-13 | Rca Corp | Thin Film Field-Effect Solid State Devices |
FR2019295B1 (en) * | 1968-07-15 | 1974-09-20 | Ncr Co | |
US3616527A (en) * | 1968-07-15 | 1971-11-02 | Ncr Co | Method of accurately doping a semiconductor material layer |
US3840695A (en) * | 1972-10-10 | 1974-10-08 | Westinghouse Electric Corp | Liquid crystal image display panel with integrated addressing circuitry |
-
1976
- 1976-08-12 NL NL7608958A patent/NL7608958A/en not_active Application Discontinuation
- 1976-08-20 DE DE19762637481 patent/DE2637481A1/en active Granted
- 1976-08-25 FR FR7625764A patent/FR2322461A1/en active Granted
- 1976-08-27 JP JP10172876A patent/JPS5235585A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688354A (en) * | 1979-12-20 | 1981-07-17 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5788945U (en) * | 1980-11-20 | 1982-06-01 | ||
JPS5788944U (en) * | 1980-11-20 | 1982-06-01 | ||
JPS5788943U (en) * | 1980-11-20 | 1982-06-01 | ||
JPS5790977A (en) * | 1980-11-27 | 1982-06-05 | Seiko Epson Corp | Double-layer gate polysilicon mos transistor |
JPS5828780A (en) * | 1981-08-12 | 1983-02-19 | 富士通株式会社 | Display |
JPH0155458B2 (en) * | 1981-08-12 | 1989-11-24 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
FR2322461A1 (en) | 1977-03-25 |
DE2637481A1 (en) | 1977-03-03 |
DE2637481C2 (en) | 1987-12-17 |
NL7608958A (en) | 1977-03-02 |
FR2322461B1 (en) | 1982-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56115571A (en) | Thin film transistor | |
GB2056770B (en) | Thin film transistors | |
JPS5274283A (en) | Transistor | |
AU505462B2 (en) | Thick film thermocouples | |
JPS5247731A (en) | Film treating device | |
JPS5273026A (en) | Film treating device | |
JPS5451782A (en) | Thin film transistor | |
JPS51144586A (en) | Transistor | |
JPS5266381A (en) | Fet transistor | |
GB2067353B (en) | Thin film transistor | |
JPS5234639A (en) | Magnetic thin film memory | |
JPS5247730A (en) | Film treating device | |
GB2065368B (en) | Thin film transistors | |
JPS5211027A (en) | Film unit | |
ZA761400B (en) | Polymeric film | |
JPS51134134A (en) | Electrophotographic film device | |
JPS5235585A (en) | Thin film transistor | |
GB2044994B (en) | Thin film transistors | |
JPS5253257A (en) | Thin film capacitor | |
AU1780876A (en) | Foamed ointment film | |
JPS5248312A (en) | Photographic film | |
JPS5213582A (en) | Film base | |
AU497831B2 (en) | Transistor | |
JPS5222482A (en) | Vmost transistor | |
GB1546511A (en) | Film projecting device |