JPS5235585A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS5235585A
JPS5235585A JP10172876A JP10172876A JPS5235585A JP S5235585 A JPS5235585 A JP S5235585A JP 10172876 A JP10172876 A JP 10172876A JP 10172876 A JP10172876 A JP 10172876A JP S5235585 A JPS5235585 A JP S5235585A
Authority
JP
Japan
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10172876A
Other languages
Japanese (ja)
Inventor
Chien Ruo Fuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5235585A publication Critical patent/JPS5235585A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
JP10172876A 1975-08-29 1976-08-27 Thin film transistor Pending JPS5235585A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60913975A 1975-08-29 1975-08-29

Publications (1)

Publication Number Publication Date
JPS5235585A true JPS5235585A (en) 1977-03-18

Family

ID=24439511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10172876A Pending JPS5235585A (en) 1975-08-29 1976-08-27 Thin film transistor

Country Status (4)

Country Link
JP (1) JPS5235585A (en)
DE (1) DE2637481A1 (en)
FR (1) FR2322461A1 (en)
NL (1) NL7608958A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688354A (en) * 1979-12-20 1981-07-17 Toshiba Corp Semiconductor integrated circuit device
JPS5788945U (en) * 1980-11-20 1982-06-01
JPS5788944U (en) * 1980-11-20 1982-06-01
JPS5788943U (en) * 1980-11-20 1982-06-01
JPS5790977A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Double-layer gate polysilicon mos transistor
JPS5828780A (en) * 1981-08-12 1983-02-19 富士通株式会社 Display

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
GB1161647A (en) * 1967-08-04 1969-08-13 Rca Corp Thin Film Field-Effect Solid State Devices
FR2019295B1 (en) * 1968-07-15 1974-09-20 Ncr Co
US3616527A (en) * 1968-07-15 1971-11-02 Ncr Co Method of accurately doping a semiconductor material layer
US3840695A (en) * 1972-10-10 1974-10-08 Westinghouse Electric Corp Liquid crystal image display panel with integrated addressing circuitry

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688354A (en) * 1979-12-20 1981-07-17 Toshiba Corp Semiconductor integrated circuit device
JPS5788945U (en) * 1980-11-20 1982-06-01
JPS5788944U (en) * 1980-11-20 1982-06-01
JPS5788943U (en) * 1980-11-20 1982-06-01
JPS5790977A (en) * 1980-11-27 1982-06-05 Seiko Epson Corp Double-layer gate polysilicon mos transistor
JPS5828780A (en) * 1981-08-12 1983-02-19 富士通株式会社 Display
JPH0155458B2 (en) * 1981-08-12 1989-11-24 Fujitsu Ltd

Also Published As

Publication number Publication date
FR2322461A1 (en) 1977-03-25
DE2637481A1 (en) 1977-03-03
DE2637481C2 (en) 1987-12-17
NL7608958A (en) 1977-03-02
FR2322461B1 (en) 1982-11-19

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