JPS54126483A - Schottky barrier gate field effect transistor and its production - Google Patents

Schottky barrier gate field effect transistor and its production

Info

Publication number
JPS54126483A
JPS54126483A JP3432778A JP3432778A JPS54126483A JP S54126483 A JPS54126483 A JP S54126483A JP 3432778 A JP3432778 A JP 3432778A JP 3432778 A JP3432778 A JP 3432778A JP S54126483 A JPS54126483 A JP S54126483A
Authority
JP
Japan
Prior art keywords
layer
mask
gaas
anodic oxidation
photo resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3432778A
Other languages
Japanese (ja)
Inventor
Hitoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3432778A priority Critical patent/JPS54126483A/en
Publication of JPS54126483A publication Critical patent/JPS54126483A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a good-electrical stability GaAs Schottky barrier gate FET by producing it by combining the anodic oxidation method and the heat treatment method.
CONSTITUTION: N-type GaAs operating layer 12 is grown epitaxially on GaAs substrate 11, and Al layer 44 is caused to adhere onto all the surface, and photo resistor mask 41 is formed on a prescribed region. Next, photo resistor mask 41 is used as a mask to perform anodic oxidation, and layer 44 is converted to Al2O3 layer 44', and continuously, the same anodic oxidation liquid is used to oxidize selectively operating layer 12, thereby forming GaAs oxide layer 12'. After that, mask 41 is removed, and heat treatment is performed in an N2 atmosphere, and photo resistor mask 42 is provided again from the part on left layer 44 through the part on layer 44' in both sides of layer 44. Next, exposed layers 44' and 12' are removed by buffer etching, and respective ohmic electrodes 43 and 45 of the source and the drain are caused to adhere to layer 12 by the lift-off method. After that, a 1μm-gate length GaAs MESFET is formed by the normal method.
COPYRIGHT: (C)1979,JPO&Japio
JP3432778A 1978-03-24 1978-03-24 Schottky barrier gate field effect transistor and its production Pending JPS54126483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3432778A JPS54126483A (en) 1978-03-24 1978-03-24 Schottky barrier gate field effect transistor and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3432778A JPS54126483A (en) 1978-03-24 1978-03-24 Schottky barrier gate field effect transistor and its production

Publications (1)

Publication Number Publication Date
JPS54126483A true JPS54126483A (en) 1979-10-01

Family

ID=12411050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3432778A Pending JPS54126483A (en) 1978-03-24 1978-03-24 Schottky barrier gate field effect transistor and its production

Country Status (1)

Country Link
JP (1) JPS54126483A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643767A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS62141727A (en) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643767A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same
JPS62141727A (en) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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