JPS54126483A - Schottky barrier gate field effect transistor and its production - Google Patents
Schottky barrier gate field effect transistor and its productionInfo
- Publication number
- JPS54126483A JPS54126483A JP3432778A JP3432778A JPS54126483A JP S54126483 A JPS54126483 A JP S54126483A JP 3432778 A JP3432778 A JP 3432778A JP 3432778 A JP3432778 A JP 3432778A JP S54126483 A JPS54126483 A JP S54126483A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- gaas
- anodic oxidation
- photo resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a good-electrical stability GaAs Schottky barrier gate FET by producing it by combining the anodic oxidation method and the heat treatment method.
CONSTITUTION: N-type GaAs operating layer 12 is grown epitaxially on GaAs substrate 11, and Al layer 44 is caused to adhere onto all the surface, and photo resistor mask 41 is formed on a prescribed region. Next, photo resistor mask 41 is used as a mask to perform anodic oxidation, and layer 44 is converted to Al2O3 layer 44', and continuously, the same anodic oxidation liquid is used to oxidize selectively operating layer 12, thereby forming GaAs oxide layer 12'. After that, mask 41 is removed, and heat treatment is performed in an N2 atmosphere, and photo resistor mask 42 is provided again from the part on left layer 44 through the part on layer 44' in both sides of layer 44. Next, exposed layers 44' and 12' are removed by buffer etching, and respective ohmic electrodes 43 and 45 of the source and the drain are caused to adhere to layer 12 by the lift-off method. After that, a 1μm-gate length GaAs MESFET is formed by the normal method.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3432778A JPS54126483A (en) | 1978-03-24 | 1978-03-24 | Schottky barrier gate field effect transistor and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3432778A JPS54126483A (en) | 1978-03-24 | 1978-03-24 | Schottky barrier gate field effect transistor and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54126483A true JPS54126483A (en) | 1979-10-01 |
Family
ID=12411050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3432778A Pending JPS54126483A (en) | 1978-03-24 | 1978-03-24 | Schottky barrier gate field effect transistor and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54126483A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643767A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
JPS5643768A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
JPS62141727A (en) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1978
- 1978-03-24 JP JP3432778A patent/JPS54126483A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643767A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
JPS5643768A (en) * | 1979-09-17 | 1981-04-22 | Matsushita Electric Ind Co Ltd | Fet transistor and method of producing the same |
JPS62141727A (en) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
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