JPS57211275A - Manufacture of schottky barrier gate type field-effect transistor - Google Patents
Manufacture of schottky barrier gate type field-effect transistorInfo
- Publication number
- JPS57211275A JPS57211275A JP9626581A JP9626581A JPS57211275A JP S57211275 A JPS57211275 A JP S57211275A JP 9626581 A JP9626581 A JP 9626581A JP 9626581 A JP9626581 A JP 9626581A JP S57211275 A JPS57211275 A JP S57211275A
- Authority
- JP
- Japan
- Prior art keywords
- films
- shaped
- schottky barrier
- gate type
- barrier gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Weting (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To decrease source resistance while relaxing partial electrostatic concentration at the drain side by forming a side surface steeply at the source electrode side and taperlingly at the drain electrode side in the structure of a recess shaped in order to isolate an active region when manufacturing the Schottky barrier gate type FET. CONSTITUTION:An N type GaAs active operating layer 21 is grown onto a semi- insulating GaAs substrate 20 in epitaxial process, and a photo-resist layer 22, Al films 23 and SiO2 films 24 are laminated and attached to the whole surface. Masks consisting of photo-resist layers 25 are shaped onto the films 24, the films 24, 23, 22 exposed are removed through etching, and undercuts are formed to the films 23, 22 among these films. The layers 25 are removed, the whole surface is coated with SiO2 films 26, and clearances determining gate length are formed between the films 26 on the films 26 and the films 24 on the layer 21 exposed by the undercuts. Anodic oxidation is repeated, and the recesses, which are steep at the source side and are gentle at the drain side, are shaped in the clearances.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9626581A JPS57211275A (en) | 1981-06-22 | 1981-06-22 | Manufacture of schottky barrier gate type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9626581A JPS57211275A (en) | 1981-06-22 | 1981-06-22 | Manufacture of schottky barrier gate type field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57211275A true JPS57211275A (en) | 1982-12-25 |
Family
ID=14160329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9626581A Pending JPS57211275A (en) | 1981-06-22 | 1981-06-22 | Manufacture of schottky barrier gate type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57211275A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61240684A (en) * | 1985-04-18 | 1986-10-25 | Nec Corp | Schottky-type field effect transistor and manufacture thereof |
| US6262444B1 (en) | 1997-04-23 | 2001-07-17 | Nec Corporation | Field-effect semiconductor device with a recess profile |
-
1981
- 1981-06-22 JP JP9626581A patent/JPS57211275A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61240684A (en) * | 1985-04-18 | 1986-10-25 | Nec Corp | Schottky-type field effect transistor and manufacture thereof |
| US6262444B1 (en) | 1997-04-23 | 2001-07-17 | Nec Corporation | Field-effect semiconductor device with a recess profile |
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