JPS6482569A - Field-effect transistor and manufacture thereof - Google Patents

Field-effect transistor and manufacture thereof

Info

Publication number
JPS6482569A
JPS6482569A JP24021687A JP24021687A JPS6482569A JP S6482569 A JPS6482569 A JP S6482569A JP 24021687 A JP24021687 A JP 24021687A JP 24021687 A JP24021687 A JP 24021687A JP S6482569 A JPS6482569 A JP S6482569A
Authority
JP
Japan
Prior art keywords
sio2
sin film
layer
region
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24021687A
Other languages
Japanese (ja)
Other versions
JP2504782B2 (en
Inventor
Shigeru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62240216A priority Critical patent/JP2504782B2/en
Publication of JPS6482569A publication Critical patent/JPS6482569A/en
Application granted granted Critical
Publication of JP2504782B2 publication Critical patent/JP2504782B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To easily obtain ohmic contact in a source region and a drain region, by selectively forming material which has a band gap different from semiconductor layer material and is available for lattice matching, on only a region turning to a channel in a III-V compound semiconductor layer. CONSTITUTION:An N-type GaAs layer 22 is formed on a semiinsulating GaAs substrate 21. Resist is spread on the surface of the GaAs layer 22, and regions except a part turning to a channel are eliminated. By using a left resist film 27 as a mask, ion-implanting method is applied to form high concentration impurity layers 28, 29. By sputtering method and the like, an SiO2 or SiN film 30 is formed on the whole surface. By using the SiO2 or SiN film 30 as a mask, an undoped AlGaAs layer 23 is selectively grown in an aperture part 31. A gate electrode 24, a source electrode 25 and a drain electrode 26 are formed, and the SiO2 or SiN film 30 is eliminated in case of need.
JP62240216A 1987-09-25 1987-09-25 Method for manufacturing field effect transistor Expired - Lifetime JP2504782B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240216A JP2504782B2 (en) 1987-09-25 1987-09-25 Method for manufacturing field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240216A JP2504782B2 (en) 1987-09-25 1987-09-25 Method for manufacturing field effect transistor

Publications (2)

Publication Number Publication Date
JPS6482569A true JPS6482569A (en) 1989-03-28
JP2504782B2 JP2504782B2 (en) 1996-06-05

Family

ID=17056177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240216A Expired - Lifetime JP2504782B2 (en) 1987-09-25 1987-09-25 Method for manufacturing field effect transistor

Country Status (1)

Country Link
JP (1) JP2504782B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599389A (en) * 1990-02-14 1997-02-04 Kabushiki Kaisha Toshiba Compound semiconductor and method of manufacturing the same
US7091579B2 (en) * 2002-02-20 2006-08-15 Fuji Electric Co., Ltd. Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115375A (en) * 1984-07-02 1986-01-23 Nec Corp Hetero junction fet
JPS63275185A (en) * 1987-05-06 1988-11-11 Nec Corp Field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115375A (en) * 1984-07-02 1986-01-23 Nec Corp Hetero junction fet
JPS63275185A (en) * 1987-05-06 1988-11-11 Nec Corp Field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599389A (en) * 1990-02-14 1997-02-04 Kabushiki Kaisha Toshiba Compound semiconductor and method of manufacturing the same
US7091579B2 (en) * 2002-02-20 2006-08-15 Fuji Electric Co., Ltd. Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof

Also Published As

Publication number Publication date
JP2504782B2 (en) 1996-06-05

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