JPS577123A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS577123A
JPS577123A JP8193580A JP8193580A JPS577123A JP S577123 A JPS577123 A JP S577123A JP 8193580 A JP8193580 A JP 8193580A JP 8193580 A JP8193580 A JP 8193580A JP S577123 A JPS577123 A JP S577123A
Authority
JP
Japan
Prior art keywords
electrode
forming
substrate
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8193580A
Other languages
Japanese (ja)
Inventor
Masahiro Hagio
Shutaro Nanbu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8193580A priority Critical patent/JPS577123A/en
Publication of JPS577123A publication Critical patent/JPS577123A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deterioration of the characteristics of a compound semiconductor device in a step of forming the electrode of GaAsFET, for example, by forming in advance an insulating film on the surface of a substrate, removing an insulating film of the region forming the electrode, then forming the electrode metal, and thus protecting the surface of the substrate. CONSTITUTION:In the step of manufacturing, for example, a GaAs Schottky gate FET, an SiO2 film 3 is formed on a substrate 1 formed with an active layer 2. Then, a resist layer 4 is formed, the films 3 of the source and the drain regions are removed, an electrode material is deposited, is lifted off, and an electrode 6 is formed. Then, a resist layer 7 opened at the gate electrode region is formed, an SiO2 film 3 is similarly removed, a gate metal is then deposited, is lifted off, a gate electrode 9 is then formed, and an element is completed. Thus, the surface of the substrae can be treated with medicine or with cleaning or the like by protecting the surface. Accordingly, the characteristics of the element, e.g., noise index, power gain, etc. can be improved.
JP8193580A 1980-06-16 1980-06-16 Manufacture of compound semiconductor device Pending JPS577123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8193580A JPS577123A (en) 1980-06-16 1980-06-16 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8193580A JPS577123A (en) 1980-06-16 1980-06-16 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS577123A true JPS577123A (en) 1982-01-14

Family

ID=13760334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8193580A Pending JPS577123A (en) 1980-06-16 1980-06-16 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS577123A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4792531A (en) * 1987-10-05 1988-12-20 Menlo Industries, Inc. Self-aligned gate process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061184A (en) * 1973-09-28 1975-05-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061184A (en) * 1973-09-28 1975-05-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4792531A (en) * 1987-10-05 1988-12-20 Menlo Industries, Inc. Self-aligned gate process

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