JPS5749271A - Insulated-gate type field-effect semiconductor device - Google Patents
Insulated-gate type field-effect semiconductor deviceInfo
- Publication number
- JPS5749271A JPS5749271A JP12452080A JP12452080A JPS5749271A JP S5749271 A JPS5749271 A JP S5749271A JP 12452080 A JP12452080 A JP 12452080A JP 12452080 A JP12452080 A JP 12452080A JP S5749271 A JPS5749271 A JP S5749271A
- Authority
- JP
- Japan
- Prior art keywords
- film
- drain
- oxide film
- gate oxide
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000006378 damage Effects 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To substantially increase the distance between drain and gate electrodes in order to prevent destruction of a gate oxide film resulting from concentration of field, by gradually increasing the thickness of the gate oxide film from the source to the drain. CONSTITUTION:On a p type Si substrate 10, an SiO2 film 11 and an Si3N4 film 12 are piled up, and an opening 13 is provided in the drain region in order to form an n layer 14. Then, carrying out a thermal oxidation with the Si3N4 12 as a mask permits SiO2 having a gradient film thickness to be obtained. A portion of each of the Si3N4 film 12 and the SiO2 film 11 is removed, the source region is opened in order to provide an n layer 16, and a gate electrode 17 is formed on the gate oxide film 15 between the layers 16 and 14. In this case, the thickness of the gate oxide film 15 is made smaller than the length of the gate between the drain 14 and the source 16. By said constitution, it is possible to ease the concentration of field in the vicinity of the drain junction surface, so that destruction of the gate oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12452080A JPS5749271A (en) | 1980-09-10 | 1980-09-10 | Insulated-gate type field-effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12452080A JPS5749271A (en) | 1980-09-10 | 1980-09-10 | Insulated-gate type field-effect semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5749271A true JPS5749271A (en) | 1982-03-23 |
Family
ID=14887508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12452080A Pending JPS5749271A (en) | 1980-09-10 | 1980-09-10 | Insulated-gate type field-effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5749271A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6285422B1 (en) | 1996-09-17 | 2001-09-04 | Seiko Epson Corporation | Transflective liquid crystal device with bright reflective display |
-
1980
- 1980-09-10 JP JP12452080A patent/JPS5749271A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6285422B1 (en) | 1996-09-17 | 2001-09-04 | Seiko Epson Corporation | Transflective liquid crystal device with bright reflective display |
| US6933992B2 (en) | 1996-09-17 | 2005-08-23 | Seiko Epson Corporation | Transflective liquid crystal device with bright reflective display |
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